IRF6709S2TR1PBF

IRF6709S2TR1PBF
Mfr. #:
IRF6709S2TR1PBF
製造商:
Infineon / IR
描述:
MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
生命週期:
製造商新產品
數據表:
IRF6709S2TR1PBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRF6709S2TR1PBF DatasheetIRF6709S2TR1PBF Datasheet (P4-P6)IRF6709S2TR1PBF Datasheet (P7-P9)IRF6709S2TR1PBF Datasheet (P10)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
DirectFET-S1
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
25 V
Id - 連續漏極電流:
39 A
Rds On - 漏源電阻:
13.5 mOhms
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
8.1 nC
Pd - 功耗:
21 W
配置:
單身的
打包:
捲軸
高度:
0.74 mm
長度:
4.85 mm
晶體管類型:
1 N-Channel
寬度:
3.95 mm
品牌:
英飛凌/紅外
產品類別:
MOSFET
出廠包裝數量:
1000
子類別:
MOSFET
第 # 部分別名:
SP001523938
單位重量:
0.003527 oz
Tags
IRF670, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ied Electronics & Automation
MOSFET; 25V; 12.000A; DIRECTFET-LV
***i-Key
MOSFET N-CH 25V 12A DIRECTFET-S1
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:12A; On State Resistance:5.9mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:S1; Termination Type:SMD; Alternate Case Style:DirectFET; Max Voltage Vgs th:2.35V; Min Voltage Vgs th:1.35V; Pulse Current Idm:100A; Transistor Case Style:S1
***ment14 APAC
MOSFET, N-CH, 25V, DIRECTFETS1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
型號 製造商 描述 庫存 價格
IRF6709S2TR1PBF
DISTI # IRF6709S2TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6709S2TR1PBF
    DISTI # IRF6709S2TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6709S2TR1PBF
      DISTI # IRF6709S2TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6709S2TR1PBF
        DISTI # 70019593
        Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET-LV
        RoHS: Compliant
        0
        • 1000:$1.0400
        • 2000:$1.0190
        • 5000:$0.9880
        • 10000:$0.9460
        • 25000:$0.8840
        IRF6709S2TR1PBF
        DISTI # 942-IRF6709S2TR1PBF
        Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
        RoHS: Compliant
        0
          IRF6709S2TR1PBFInternational Rectifier 1000
            IRF6709S2TR1PBFInternational Rectifier 
            RoHS: Compliant
            1000
              IRF6709S2TR1PBF
              DISTI # 1688580
              Infineon Technologies AGMOSFET, N-CH, 25V, DIRECTFETS1
              RoHS: Compliant
              668
              • 1000:$1.4100
              • 250:$1.5900
              • 100:$1.7800
              • 25:$2.2000
              • 1:$2.6700
              IRF6709S2TR1PBF
              DISTI # 1688580
              Infineon Technologies AGMOSFET, N-CH, 25V, DIRECTFETS1
              RoHS: Compliant
              668
              • 500:£0.4580
              • 250:£0.4590
              • 100:£0.4600
              • 25:£0.5450
              • 5:£0.5950
              圖片 型號 描述
              IRF6709S2TRPBF

              Mfr.#: IRF6709S2TRPBF

              OMO.#: OMO-IRF6709S2TRPBF

              MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              IRF6709S2TR1PBF

              Mfr.#: IRF6709S2TR1PBF

              OMO.#: OMO-IRF6709S2TR1PBF

              MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              IRF6709S2TR1PBF

              Mfr.#: IRF6709S2TR1PBF

              OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES

              MOSFET N-CH 25V 12A DIRECTFET-S1
              IRF6709S2TRPBF

              Mfr.#: IRF6709S2TRPBF

              OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES

              MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
              可用性
              庫存:
              Available
              訂購:
              4000
              輸入數量:
              IRF6709S2TR1PBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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