FDS6162N3

FDS6162N3
Mfr. #:
FDS6162N3
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 20V N-Ch PowerTrench
生命週期:
製造商新產品
數據表:
FDS6162N3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS6162N3 DatasheetFDS6162N3 Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
E
技術:
安裝方式:
貼片/貼片
包裝/案例:
SO-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
20 V
Id - 連續漏極電流:
21 A
Rds On - 漏源電阻:
45 mOhms
Vgs - 柵源電壓:
12 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
3 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
高度:
1.75 mm
長度:
4.9 mm
晶體管類型:
1 N-Channel
類型:
MOSFET
寬度:
3.9 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
119 S
秋季時間:
55 ns
濕氣敏感:
是的
產品類別:
MOSFET
上升時間:
25 ns
出廠包裝數量:
2500
子類別:
MOSFET
典型關斷延遲時間:
85 ns
典型的開啟延遲時間:
20 ns
單位重量:
0.002998 oz
Tags
FDS61, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 20V 21A 8-Pin FLMP SOIC T/R
***i-Key
MOSFET N-CH 20V 21A 8-SOIC
***ter Electronics
20V/12V, 4.5/6MO, NCH, SINGLE, SO8 FLMP, 300A GOX, PTII
***ser
MOSFETs 20V N-Ch PowerTrench
***ark
MOSFET, N, SMD, FLMP, SO-8; Transistor type:PowerTrench; Voltage, Vds typ:20V; Current, Id cont:21A; Resistance, Rds on:0.0045ohm; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:0.9V; Case style:SOIC; Current, Idm RoHS Compliant: Yes
***nell
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:21A; Resistance, Rds On:0.0045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:60A; No. of Pins:8; Power Dissipation:3mW; Voltage, Vds Max:20V
型號 製造商 描述 庫存 價格
FDS6162N3
DISTI # FDS6162N3TR-ND
ON SemiconductorMOSFET N-CH 20V 21A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    FDS6162N3
    DISTI # FDS6162N3CT-ND
    ON SemiconductorMOSFET N-CH 20V 21A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDS6162N3
      DISTI # FDS6162N3DKR-ND
      ON SemiconductorMOSFET N-CH 20V 21A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDS6162N3
        DISTI # 512-FDS6162N3
        ON SemiconductorMOSFET 20V N-Ch PowerTrench
        RoHS: Compliant
        0
          FDS6162N3Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 21A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          33137
          • 1000:$1.6100
          • 500:$1.6900
          • 100:$1.7600
          • 25:$1.8400
          • 1:$1.9800
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          可用性
          庫存:
          Available
          訂購:
          4000
          輸入數量:
          FDS6162N3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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