IRG7PH35UPBF

Mfr. #:: IRG7PH35UPBF
製造商:: Infineon / IR
描述:: IGBT Transistors 1200V 55A
生命週期:: 製造商新產品
數據表:: IRG7PH35UPBF 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1.2 kV

集電極-發射極飽和電壓：: 2.2 V

最大柵極發射極電壓：: 30 V

25 C 時的連續集電極電流：: 55 A

Pd - 功耗：: 210 W

最低工作溫度：: - 55 C

打包：: 管子

高度：: 20.7 mm

長度：: 15.87 mm

寬度：: 5.31 mm

品牌：: 英飛凌/紅外

產品類別：: IGBT晶體管

出廠包裝數量：: 25

子類別：: IGBT

第 # 部分別名：: SP001545868

單位重量：: 1.340411 oz

Tags: IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG7PH35UPBF 描述

***Components: In a Tube of 25, Infineon IRG7PH35UPBF IGBT, 55 A 1200 V, 3-Pin TO-247AC

***ernational Rectifier: 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package

***ical: Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AC

***ark: TUBE / 1200V 55.000A TO-247 ;ROHS COMPLIANT: YES

***i-Key: IGBT N-CH 1200V 55A TO-247AC

***ied Electronics & Automation: MOSFET; 1200V; 55.000A; TO-247

***nell: IGBT,N CH,1200V,55A,TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W

***ment14 APAC: IGBT,N CH,1200V,55A,TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W

Market price

型號	製造商	描述	庫存	價格
IRG7PH35UPBF DISTI # IRG7PH35UPBF-ND	Infineon Technologies AG	IGBT 1200V 55A 210W TO247AC RoHS: Compliant Min Qty: 125 Container: Tube	Limited Supply - Call
IRG7PH35UPBF DISTI # IRG7PH35UPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRG7PH35UPBF) Min Qty: 136 Container: Bulk	Americas - 0	680:$2.2900 1360:$2.2900 408:$2.3900 272:$2.4900 136:$2.6900
IRG7PH35UPBF DISTI # 942-IRG7PH35UPBF	Infineon Technologies AG	IGBT Transistors 1200V 55A RoHS: Compliant	50	1:$4.8800 10:$4.1500 25:$4.0800 100:$3.6000 250:$3.4100 500:$3.0400 1000:$2.5700 2500:$2.3700
IRG7PH35UPBF	International Rectifier	Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	50	1000:$2.4300 500:$2.5600 100:$2.6700 25:$2.7800 1:$3.0000
IRG7PH35UPBF	International Rectifier		247
IRG7PH35UPBF DISTI # 7377556P	Infineon Technologies AG	TRANSISTOR IGBT N-CH 1.2KV 55A TO247AC, TU	33	5:£1.7000
IRG7PH35UPBF	International Rectifier	RoHS: Compliant	Europe - 100

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