IKD03N60RFATMA1

IKD03N60RFATMA1
Mfr. #:
IKD03N60RFATMA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT w/ INTG DIODE 600V 5A
生命週期:
製造商新產品
數據表:
IKD03N60RFATMA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IKD03N60RFATMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-252-3
安裝方式:
貼片/貼片
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
集電極-發射極飽和電壓:
2.2 V
最大柵極發射極電壓:
20 V
25 C 時的連續集電極電流:
5 A
Pd - 功耗:
53.6 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 175 C
系列:
RC
打包:
捲軸
高度:
2.41 mm
長度:
6.73 mm
寬度:
6.22 mm
品牌:
英飛凌科技
柵極-發射極漏電流:
100 nA
產品類別:
IGBT晶體管
出廠包裝數量:
2500
子類別:
IGBT
商品名:
戰壕
第 # 部分別名:
IKD03N60RF SP000942930
Tags
IKD03, IKD0, IKD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252
***ineon SCT
The RC-Drives 600 V, 3 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market, PG-TO252-3, RoHS
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-252
***ineon SCT
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO252-3, RoHS
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
***et
IGBT 600V 6A 30W DPAK
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin (2+Tab) DPAK T/R
***icontronic
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***inecomponents.com
POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL
***ser
IGBTs 6a, 600V N-Ch IGBT UFS Series
***ponent Stockers USA
6 A 600 V N-CHANNEL IGBT TO-252AA
***ical
Trans IGBT Chip N-CH 600V 6.3A 35000mW 3-Pin(2+Tab) DPAK Tube
***ineon SCT
600V IGBT with UltraFast Soft Recovery Diode, DPAKCOPAK-3, RoHS
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Refridgeration
***icontronic
Insulated Gate Bipolar Transistor, 6.3A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 6.3A, TO-252AA-3
*** Electronic Components
Rectifiers 600V IGBT Ultrafast 3.7A 1.95V
***ark
TUBE / IG,COPAK DPAK,G5,U,U,N,0.5,600
***nell
IGBT, SINGLE, 600V, 6.3A, TO-252AA-3; DC Collector Current: 6.3A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No.
***ical
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
***icroelectronics
N-channel 3 A, 600 V low drop IGBT
***ure Electronics
STGD3NB60SD Series 600 V 3 A Surface Mount N-Channel PowerMESH™ IGBT - DPAK-3
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
型號 製造商 描述 庫存 價格
IKD03N60RFATMA1
DISTI # V36:1790_06384425
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.3880
  • 1250000:$0.3883
  • 250000:$0.4204
  • 25000:$0.4796
  • 2500:$0.4897
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1CT-ND
Infineon Technologies AGIGBT 600V 6.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2296In Stock
  • 1000:$0.5404
  • 500:$0.6845
  • 100:$0.8286
  • 10:$1.0630
  • 1:$1.1900
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1DKR-ND
Infineon Technologies AGIGBT 600V 6.5A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2296In Stock
  • 1000:$0.5404
  • 500:$0.6845
  • 100:$0.8286
  • 10:$1.0630
  • 1:$1.1900
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1TR-ND
Infineon Technologies AGIGBT 600V 6.5A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.4663
  • 2500:$0.4897
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Bulk (Alt: IKD03N60RFATMA1)
RoHS: Compliant
Min Qty: 863
Container: Bulk
Americas - 0
  • 8630:$0.3679
  • 4315:$0.3749
  • 2589:$0.3879
  • 1726:$0.4019
  • 863:$0.4169
IKD03N60RFATMA1
DISTI # IKD03N60RFATMA1
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD03N60RFATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4229
  • 15000:$0.4299
  • 10000:$0.4449
  • 5000:$0.4619
  • 2500:$0.4789
IKD03N60RFATMA1
DISTI # SP000942930
Infineon Technologies AGTrans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R (Alt: SP000942930)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.3729
  • 15000:€0.4019
  • 10000:€0.4349
  • 5000:€0.4749
  • 2500:€0.5799
IKD03N60RFATMA1
DISTI # 726-IKD03N60RFATMA1
Infineon Technologies AGIGBT Transistors IGBT w/ INTG DIODE 600V 5A
RoHS: Compliant
2061
  • 1:$1.0500
  • 10:$0.8910
  • 100:$0.6840
  • 500:$0.6050
  • 1000:$0.4770
  • 2500:$0.4230
IKD03N60RFATMA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252
RoHS: Compliant
9000
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
IKD03N60RFATMA1
DISTI # IKD03N60RF
Infineon Technologies AG600V 5A 53,6W TO252
RoHS: Compliant
0
  • 5:€1.2800
  • 50:€0.6800
  • 200:€0.3800
  • 500:€0.3600
圖片 型號 描述
IKD03N60RFATMA1

Mfr.#: IKD03N60RFATMA1

OMO.#: OMO-IKD03N60RFATMA1

IGBT Transistors IGBT w/ INTG DIODE 600V 5A
IKD03N60RFAATMA1

Mfr.#: IKD03N60RFAATMA1

OMO.#: OMO-IKD03N60RFAATMA1

IGBT Transistors IGBT PRODUCTS
IKD03N60RF

Mfr.#: IKD03N60RF

OMO.#: OMO-IKD03N60RF

IGBT Transistors TRENCH RC Drives Fast 600V 2.5A
IKD03N60RF

Mfr.#: IKD03N60RF

OMO.#: OMO-IKD03N60RF-INFINEON-TECHNOLOGIES

IGBT 600V 5A 53.6W TO252-3
IKD03N60RFATMA1

Mfr.#: IKD03N60RFATMA1

OMO.#: OMO-IKD03N60RFATMA1-INFINEON-TECHNOLOGIES

IGBT 600V 6.5A TO252-3
IKD03N60RFAATMA1

Mfr.#: IKD03N60RFAATMA1

OMO.#: OMO-IKD03N60RFAATMA1-INFINEON-TECHNOLOGIES

IGBT Transistors IGBT PRODUCTS
可用性
庫存:
Available
訂購:
1985
輸入數量:
IKD03N60RFATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.05
US$1.05
10
US$0.89
US$8.91
100
US$0.68
US$68.40
500
US$0.60
US$302.50
1000
US$0.48
US$477.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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