BLS6G3135-120,112

BLS6G3135-120,112
Mfr. #:
BLS6G3135-120,112
製造商:
Ampleon USA Inc
描述:
RF MOSFET Transistors LDMOS TNS
生命週期:
製造商新產品
數據表:
BLS6G3135-120,112 數據表
交貨:
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ECAD Model:
產品屬性
屬性值
Tags
BLS6G3135-1, BLS6G3, BLS6, BLS
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 3.1 to 3.5 GHz, 120 W, 11 dB, 32 V, LDMOS, SOT-502A
***et
Trans MOSFET N-CH 60V 7.2A 3-Pin LDMOST Blister
*** Americas
LDMOS S-Band radar power transistor
***ark
N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B; Drain Source Voltage Vds:32V; Continuous Drain Current Id:7.2A; Power Dissipation Pd:120W; Operating Frequency Min:3.1Ghz; Operating Frequency Max:3.5Ghz; Msl:- Rohs Compliant: Yes
型號 製造商 描述 庫存 價格
BLS6G3135-120,112
DISTI # BLS6G3135-120,112-ND
AmpleonRF FET LDMOS 60V 11DB SOT502A
RoHS: Compliant
Min Qty: 20
Container: Tray
Temporarily Out of Stock
  • 20:$328.9970
BLS6G3135-120,112
DISTI # 70R2902
AmpleonN CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 3100MHZ - 3500MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:7.2A,Power Dissipation Pd:120W,Operating Frequency Min:3.1GHz,Operating Frequency Max:3.5GHz,MSL:- RoHS Compliant: Yes0
    圖片 型號 描述
    BLS6G3135-120

    Mfr.#: BLS6G3135-120

    OMO.#: OMO-BLS6G3135-120-1152

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    BLS6G3135-120112

    Mfr.#: BLS6G3135-120112

    OMO.#: OMO-BLS6G3135-120112-1190

    全新原裝
    BLS6G3135-20

    Mfr.#: BLS6G3135-20

    OMO.#: OMO-BLS6G3135-20-1190

    全新原裝
    BLS6G3135-20112

    Mfr.#: BLS6G3135-20112

    OMO.#: OMO-BLS6G3135-20112-1190

    Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
    BLS6G3135S-120112

    Mfr.#: BLS6G3135S-120112

    OMO.#: OMO-BLS6G3135S-120112-1190

    BLS6G3135S-120/SOT502/TRAY
    BLS6G3135S-20

    Mfr.#: BLS6G3135S-20

    OMO.#: OMO-BLS6G3135S-20-1190

    全新原裝
    BLS6G3135-120,112

    Mfr.#: BLS6G3135-120,112

    OMO.#: OMO-BLS6G3135-120-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    BLS6G3135S-120,112

    Mfr.#: BLS6G3135S-120,112

    OMO.#: OMO-BLS6G3135S-120-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
    BLS6G3135S-20,112

    Mfr.#: BLS6G3135S-20,112

    OMO.#: OMO-BLS6G3135S-20-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
    BLS6G3135-20,112

    Mfr.#: BLS6G3135-20,112

    OMO.#: OMO-BLS6G3135-20-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    BLS6G3135-120,112的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$493.50
    US$493.50
    10
    US$468.82
    US$4 688.21
    100
    US$444.15
    US$44 414.60
    500
    US$419.47
    US$209 735.60
    1000
    US$394.80
    US$394 796.40
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