IGW30N100TFKSA1

Mfr. #:: IGW30N100TFKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
生命週期:: 製造商新產品
數據表:: IGW30N100TFKSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1000 V

集電極-發射極飽和電壓：: 1.8 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 60 A

Pd - 功耗：: 412 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

系列：: 止溝IGBT

打包：: 管子

連續集電極電流 Ic 最大值：: 30 A

品牌：: 英飛凌科技

柵極-發射極漏電流：: 600 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 240

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: IGW30N100T IGW3N1TXK SP000380845

單位重量：: 0.014110 oz

Tags: IGW30N1, IGW30N, IGW3, IGW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW30N100TFKSA1 描述

***ical: TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube

***ark: TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes

***ineon: InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications

Market price

型號	製造商	描述	庫存	價格
IGW30N100TFKSA1 DISTI # V99:2348_06378671	Infineon Technologies AG	Trans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	244	100:$3.9750 10:$4.6210 1:$6.0313
IGW30N100TFKSA1 DISTI # IGW30N100TFKSA1-ND	Infineon Technologies AG	IGBT 1000V 60A 412W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IGW30N100TFKSA1 DISTI # 26197476	Infineon Technologies AG	Trans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	244	3:$6.0313
IGW30N100TFKSA1 DISTI # 13AC9000	Infineon Technologies AG	TRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	0
IGW30N100T DISTI # 726-IGW30N100T	Infineon Technologies AG	IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech RoHS: Compliant	153	1:$5.5100 10:$4.6800 100:$4.0600 250:$3.8500 500:$3.4600
IGW30N100TFKSA1 DISTI # 726-IGW30N100TFKSA1	Infineon Technologies AG	IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech RoHS: Compliant	118	1:$5.5100 10:$4.6800 100:$4.0600 250:$3.8500 500:$3.4600
IGW30N100TFKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	69	1000:$2.3700 500:$2.4900 100:$2.6000 25:$2.7100 1:$2.9200

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