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IRFP90N20DPBF

IRFP90N20DPBF
Mfr. #:
IRFP90N20DPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 200V 94A 23mOhm 180nCAC
生命週期:
製造商新產品
數據表:
IRFP90N20DPBF 數據表
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HTML Datasheet:
IRFP90N20DPBF DatasheetIRFP90N20DPBF Datasheet (P4-P6)IRFP90N20DPBF Datasheet (P7-P9)
ECAD Model:
更多信息:
IRFP90N20DPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
94 A
Rds On - 漏源電阻：
23 mOhms
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
180 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
580 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
20.7 mm
長度：
15.87 mm
晶體管類型：
1 N-Channel
寬度：
5.31 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
39 S
秋季時間：
79 ns
產品類別：
MOSFET
上升時間：
160 ns
出廠包裝數量：
400
子類別：
MOSFET
典型關斷延遲時間：
43 ns
典型的開啟延遲時間：
23 ns
第 # 部分別名：
SP001552070
單位重量：
1.340411 oz
Tags
IRFP9, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
***itex
Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC
***eco
Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W
***ure Electronics
Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W
***ure Electronics
Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC
*** Source Electronics
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRFP4321PBF N-channel MOSFET Transistor, 78 A, 150 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 310 W
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ure Electronics
Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop
Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
MOSFET, 200V 130A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:520A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 30 / Fall Time ns = 74 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 41 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 520
***icroelectronics
N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™2; Power MOSFET
***ical
Trans MOSFET N-CH 200V 83A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 83A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-247AD
*** Electronic Components
MOSFET N-channel 200V, 83A STripFET Mosfet
***el Electronic
CAP CER 0.068UF 630V X7R RADIAL
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC
***roFlash
Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N, 200V, 20A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:20A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:80A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.83°C/W; Transistors, No. of:1; Voltage, Vds Max:200V
***ure Electronics
Single N-Channel 200 V 0.055 Ohms Flange Mount Power Mosfet - TO-247AC
***ser
Single-Gate MOSFET Transistors N-Chan 200V 46 Amp
***ical
Trans MOSFET N-CH 200V 46A 3-Pin (3+Tab) TO-247AC
***(Formerly Allied Electronics)
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型號 製造商 描述 庫存 價格
IRFP90N20DPBF
DISTI # V99:2348_13892986		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		153
  • 1:$4.4933
IRFP90N20DPBF
DISTI # IRFP90N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 94A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Bag		1940In Stock
  • 1000:$3.7410
  • 500:$4.3594
  • 100:$5.2871
  • 10:$6.3580
  • 1:$7.0700
IRFP90N20DPBF
DISTI # 26198466		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		153
  • 100:$3.1830
  • 10:$3.7530
  • 3:$4.4760
IRFP90N20DPBF
DISTI # IRFP90N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP90N20DPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 6301
  • 1:$3.6900
  • 10:$3.2900
  • 25:$3.2900
  • 50:$3.2900
  • 100:$2.9900
  • 500:$2.6900
  • 1000:$2.6900
IRFP90N20DPBF
DISTI # IRFP90N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC (Alt: IRFP90N20DPBF)
RoHS: Compliant
Min Qty: 400		Asia - 0
  • 400:$3.0443
  • 800:$2.9192
  • 1200:$2.8797
  • 2000:$2.7675
  • 4000:$2.7321
  • 10000:$2.6637
  • 20000:$2.5988
IRFP90N20DPBF
DISTI # 63J6896		Infineon Technologies AGN CHANNEL MOSFET, 200V, 94A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:94A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes458
  • 1:$7.3300
  • 10:$6.3100
  • 25:$6.0500
  • 50:$5.7900
  • 100:$5.5300
  • 250:$5.2800
  • 500:$4.7800
IRFP90N20DPBF.
DISTI # 26AC0531		Infineon Technologies AGN CHANNEL MOSFET, 200V, 94A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:94A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes0
  • 1:$7.4800
  • 10:$6.4400
  • 25:$6.1700
  • 50:$5.7900
  • 100:$5.5300
  • 250:$5.2800
  • 500:$4.7800
IRFP90N20DPBF
DISTI # 70017459		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.023Ohm,ID 94A,TO-247AC,PD 580W,VGS +/-30V
RoHS: Compliant		10
  • 1:$6.3340
  • 10:$5.5890
  • 100:$4.8720
  • 500:$4.2230
  • 1000:$3.7260
IRFP90N20DPBF
DISTI # 942-IRFP90N20DPBF		Infineon Technologies AGMOSFET MOSFT 200V 94A 23mOhm 180nCAC
RoHS: Compliant		1012
  • 1:$5.7300
  • 10:$4.8700
  • 100:$4.2200
  • 250:$4.0100
IRFP90N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.023 Ohm 270 nC HEXFET Power Mosfet - TO-247AC
RoHS: Compliant		497Tube
  • 5:$3.3100
  • 50:$2.9300
  • 250:$2.5200
IRFP90N20DPBF
DISTI # 9133907		Infineon Technologies AGMOSFET N-CHANNEL 200V 94A TO247AC, TU450
  • 25:£3.2700
  • 125:£2.7830
  • 250:£2.6360
IRFP90N20DPBF
DISTI # 6391857P		Infineon Technologies AGMOSFET N-CHANNEL 200V 94A TO247AC, TU1599
  • 13:£3.2000
IRFP90N20DPBF
DISTI # 6391857		Infineon Technologies AGMOSFET N-CHANNEL 200V 94A TO247AC, EA180
  • 1:£5.6300
  • 13:£3.2000
IRFP90N20DPBFInfineon Technologies AGMOSFET Transistor, N-Channel, TO-247AC80
  • 29:$8.3805
  • 9:$9.0600
  • 1:$13.5900
IRFP90N20DPBF
DISTI # IRFP90N20DPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,94A,580W,TO247AC1905
  • 1:$4.2900
  • 3:$3.7300
  • 10:$3.0300
  • 100:$2.6500
IRFP90N20DPBF
DISTI # TMOSP12238		Infineon Technologies AGN-CH 200V 94A 23mOhm TO247
RoHS: Compliant		Stock DE - 400Stock US - 0
  • 25:$3.6200
  • 75:$3.4100
  • 125:$3.2100
  • 225:$2.8900
  • 400:$2.7900
IRFP90N20DPBFInternational Rectifier 
RoHS: Compliant		Europe - 218
    IRFP90N20DPBF
    DISTI # IRFP90N20DPBF    		Infineon Technologies AGN-Ch 200V 94A 580W 0,023R TO247AC
    RoHS: Compliant    		780
    • 5:€2.7600
    • 25:€2.1600
    • 100:€1.9600
    • 200:€1.8900
    IRFP90N20DPBFInfineon Technologies AG 103
      IRFP90N20DPBF
      DISTI # C1S327400173089      		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube
      RoHS: Compliant      		124
      • 50:$2.5800
      • 10:$3.3000
      • 1:$4.9100
      IRFP90N20DPBF
      DISTI # C1S322000570377      		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube
      RoHS: Compliant      		275
      • 200:$3.4300
      • 50:$3.7100
      • 10:$4.9100
      • 1:$6.0600
      IRFP90N20DPBF
      DISTI # C1S322000492361      		Infineon Technologies AGTrans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube
      RoHS: Compliant      		153
      • 100:$3.1830
      • 10:$3.7530
      • 1:$4.4760
      IRFP90N20DPBFInfineon Technologies AGRoHS(ship within 1day)100
      • 1:$6.8400
      • 10:$5.8300
      • 50:$5.0500
      • 100:$4.8200
      • 500:$4.6200
      • 1000:$4.5300
      IRFP90N20DPBF
      DISTI # 8658617      		Infineon Technologies AGMOSFET, N, 200V, 94A, TO-247AC
      RoHS: Compliant      		458
      • 1:$9.0800
      • 10:$7.7100
      • 100:$6.6800
      • 250:$6.3500
      IRFP90N20DPBF
      DISTI # XSFP00000011475      		Infineon Technologies AG 
      RoHS: Compliant      		334
      • 50:$6.6200
      • 334:$6.0200
      IRFP90N20DPBF
      DISTI # 8658617      		Infineon Technologies AGMOSFET, N, 200V, 94A, TO-247AC
      RoHS: Compliant      		0
      • 1:£4.8900
      • 10:£3.2600
      • 100:£2.8400
      • 250:£2.6900
      • 500:£2.6400
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      可用性
      庫存:
      959
      訂購:
      2942
      輸入數量:
      IRFP90N20DPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$5.72
      US$5.72
      10
      US$4.86
      US$48.60
      100
      US$4.21
      US$421.00
      250
      US$4.00
      US$1 000.00
      500
      US$3.59
      US$1 795.00
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