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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BUZ344 | Infineon Technologies AG | 50 | ||
| BUZ344 | Siemens | Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | 2192 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BUZ-242424 OMO.#: OMO-BUZ-242424-1190 |
全新原裝 |
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Mfr.#: BUZ102L OMO.#: OMO-BUZ102L-1190 |
全新原裝 |
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Mfr.#: BUZ103 E3045A OMO.#: OMO-BUZ103-E3045A-1190 |
全新原裝 |
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Mfr.#: BUZ202 OMO.#: OMO-BUZ202-1190 |
全新原裝 |
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Mfr.#: BUZ22 E3045A OMO.#: OMO-BUZ22-E3045A-1190 |
全新原裝 |
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Mfr.#: BUZ261 OMO.#: OMO-BUZ261-1190 |
全新原裝 |
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Mfr.#: BUZ272 OMO.#: OMO-BUZ272-1190 |
MOSFET Transistor, P-Channel, TO-220AB |
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Mfr.#: BUZ50B OMO.#: OMO-BUZ50B-1190 |
全新原裝 |
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Mfr.#: BUZ58 OMO.#: OMO-BUZ58-1190 |
全新原裝 |
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Mfr.#: BUZ901P OMO.#: OMO-BUZ901P-1190 |
N CHANNEL MOSFET, 200V, 8A, TO-247, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:200V, On Resistance Rds(on):1.5ohm, Rds(on) Test Voltage Vgs:-, Thresh |