SI9407BDY-T1-GE3

Mfr. #:: SI9407BDY-T1-GE3
製造商:: Vishay
描述:: MOSFET P-CH 60V 4.7A 8-SOIC
生命週期:: 製造商新產品
數據表:: SI9407BDY-T1-GE3 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 威世

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI9407BDY-GE3

單位重量: 0.017870 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 8-SO

配置: 單身的

FET型: MOSFET P 溝道，金屬氧化物

最大功率: 5W

晶體管型: 1 P-Channel

漏源電壓 Vdss: 60V

輸入電容-Ciss-Vds: 600pF @ 30V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 4.7A (Tc)

Rds-On-Max-Id-Vgs: 120 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 3V @ 250μA

柵極電荷-Qg-Vgs: 22nC @ 10V

鈀功耗: 2.4 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 30 ns

上升時間: 70 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 3.2 A

Vds-漏-源-擊穿電壓: - 60 V

Rds-On-Drain-Source-Resistance: 120 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 40 ns

典型開啟延遲時間: 30 ns

通道模式: 增強

Tags: SI9407BDY-T1-GE3, SI9407BDY-T1-G, SI9407BDY-T, SI9407BDY, SI9407BD, SI9407B, SI9407, SI940, SI94, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9407BDY-T1-GE3 描述

***ied Electronics & Automation: MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W

***ure Electronics: SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No

***nell: MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

Market price

型號	製造商	描述	庫存	價格
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.4107
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.4219 25:$0.4069 62:$0.3929 125:$0.3799 312:$0.3699 625:$0.3699 1250:$0.3689
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3539 5000:$0.3439 10000:$0.3299 15000:$0.3209 25000:$0.3119
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3885) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3 DISTI # 29X0553	Vishay Intertechnologies	MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:5W , RoHS Compliant: Yes	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	P CHANNEL MOSFET, -60V, 4.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3. DISTI # 26AC3352	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 70026452	Vishay Siliconix	MOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 150mohm,Id 4.7A,SO-8,Pd 5W RoHS: Compliant	0	1:$0.7400 25:$0.7100 100:$0.6800 250:$0.6400 500:$0.6000
SI9407BDY-T1-GE3 DISTI # 781-SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	0	1:$1.1200 10:$0.9190 100:$0.7050 500:$0.6060 1000:$0.4790 2500:$0.4470 5000:$0.4250 10000:$0.4090
SI9407BDY-T1-GE3 DISTI # SI9407BDY-GE3	Vishay Intertechnologies	P-Ch 60V 4,7A 2,4W 0,12R SO8 RoHS: Compliant	0	50:€0.3720 100:€0.3120 500:€0.2820 2500:€0.2730
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	5:£0.9090 25:£0.8860 100:£0.6500
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	1:$1.6800 10:$1.4900 100:$1.1800 500:$0.9090 1000:$0.7180
SI9407BDY-T1-GE3.	Vishay Intertechnologies	MOSFET 60V 4.7A 5.0W 120mohm @ 10V RoHS: Compliant	Americas -	25:$0.5550
SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - Stock

相關產品

圖片	型號	描述
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9407BDY-T1-GE3-CUT-TAPE-1190	全新原裝
	Mfr.#: SI9407BD OMO.#: OMO-SI9407BD-1190	全新原裝
	Mfr.#: SI9407BDY OMO.#: OMO-SI9407BDY-1190	全新原裝
	Mfr.#: SI9407BDY-T1 OMO.#: OMO-SI9407BDY-T1-1190	全新原裝
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE OMO.#: OMO-SI9407BDY-T1-GE-1190	全新原裝
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE3 GE3 OMO.#: OMO-SI9407BDY-T1-GE3-GE3-1190	全新原裝

可用性

庫存:: Available
訂購:: 2500
輸入數量:

SI9407BDY-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.38~~; ~~US$0.38~~

10: ~~US$0.36~~; ~~US$3.61~~

100: ~~US$0.34~~; ~~US$34.17~~

500: ~~US$0.32~~; ~~US$161.35~~

1000: ~~US$0.30~~; ~~US$303.70~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SI9407BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes