FQU2N60CTU

Mfr. #:: FQU2N60CTU
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 600V N-Channel Adv Q-FET C-Series
生命週期:: 製造商新產品
數據表:: FQU2N60CTU 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-251-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 1.9 A

Rds On - 漏源電阻：: 4.7 Ohms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.5 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 6.3 mm

長度：: 6.8 mm

系列：: FQU2N60C

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 2.5 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 5 S

秋季時間：: 28 ns

產品類別：: MOSFET

上升時間：: 25 ns

出廠包裝數量：: 5040

子類別：: MOSFET

典型關斷延遲時間：: 24 ns

典型的開啟延遲時間：: 9 ns

單位重量：: 0.012102 oz

Tags: FQU2N60C, FQU2N60, FQU2N6, FQU2N, FQU2, FQU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQU2N60CTU 描述

***Components: In a Pack of 5, N-Channel MOSFET, 1.9 A, 600 V, 3-Pin IPAK ON Semiconductor FQU2N60CTU

***Semiconductor: Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK

***itex: Transistor N-MOSFET FQU2N60CTU, IPAK, Fairchild

***ure Electronics: N-Channel 600 V 4.7 Ohm Through Hole Power Mosfet - IPAK-3

***p One Stop Global: Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube

***ser: MOSFETs 600V N-Channel Adv Q-FET C-Series

*** Source Electronics: MOSFET N-CH 600V 1.9A IPAK

***ark: Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; Operating Temperature Max:150�C; Product Range:QFET Series; Automotive Qualification Standard:-; MSL:- RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

型號	製造商	描述	庫存	價格
FQU2N60CTU DISTI # 33614281	ON Semiconductor	QFC 600V 4.7OHM IPAK	3498	33:$0.3107
FQU2N60CTU DISTI # FQU2N60CTU-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	37In Stock	5000:$0.3670 2500:$0.3863 500:$0.5243 100:$0.6347 25:$0.7728 10:$0.8140 1:$0.9100
FQU2N60CTU DISTI # V36:1790_06359742	ON Semiconductor	QFC 600V 4.7OHM IPAK	0	5040000:$0.2706 2520000:$0.2714 504000:$0.4406 50400:$0.8375 5040:$0.9100
FQU2N60CTU DISTI # FQU2N60CTU	ON Semiconductor	Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 5040 Container: Tube	Americas - 430	50400:$0.2949 30240:$0.3019 20160:$0.3059 10080:$0.3099 5040:$0.3119
FQU2N60CTU DISTI # FQU2N60CTU	ON Semiconductor	Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 834 Container: Bulk	Americas - 0	8340:$0.3699 4170:$0.3789 2502:$0.3839 1668:$0.3889 834:$0.3919
FQU2N60CTU DISTI # FQU2N60CTU	ON Semiconductor	Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€0.2829 500:€0.3049 100:€0.3309 50:€0.3609 25:€0.3969 10:€0.4409 1:€0.4959
FQU2N60CTU DISTI # FQU2N60CTU	ON Semiconductor	Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU) RoHS: Compliant Min Qty: 5040	Asia - 0	252000:$0.3746 126000:$0.3808 50400:$0.3940 25200:$0.4080 15120:$0.4232 10080:$0.4394 5040:$0.4570
FQU2N60CTU. DISTI # 60AC9683	ON Semiconductor	Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:600V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes	0	50400:$0.2860 30240:$0.2940 20160:$0.2970 10080:$0.3010 1:$0.3030
FQU2N60CTU DISTI # 512-FQU2N60CTU	ON Semiconductor	MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant	4617	1:$0.9300 10:$0.7990 100:$0.6140 500:$0.5430 1000:$0.4290 2500:$0.3800 10000:$0.3660
FQU2N60CTU	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	42125	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
FQU2N60CTU DISTI # 6715357	ON Semiconductor	MOSFET N-CHANNEL 600V 1.9A IPAK, PK	80	250:£0.4020 100:£0.4360 25:£0.4740 5:£0.5160

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