NGTB30N135IHRWG

Mfr. #:: NGTB30N135IHRWG
製造商:: ON Semiconductor
描述:: IGBT Transistors 1350V/30A IGBT FSII TO-24
生命週期:: 製造商新產品
數據表:: NGTB30N135IHRWG 數據表
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HTML Datasheet:: NGTB30N135IHRWG Datasheet NGTB30N135IHRWG Datasheet (P4-P6)NGTB30N135IHRWG Datasheet (P7-P9)NGTB30N135IHRWG Datasheet (P10)
ECAD Model:
更多信息:: NGTB30N135IHRWG 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1350 V

集電極-發射極飽和電壓：: 2.3 V

最大柵極發射極電壓：: 25 V

25 C 時的連續集電極電流：: 60 A

Pd - 功耗：: 394 W

最低工作溫度：: - 40 C

最高工作溫度：: + 175 C

系列：: NGTB30N135IHR

打包：: 管子

品牌：: 安森美半導體

柵極-發射極漏電流：: 100 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 30

子類別：: IGBT

單位重量：: 0.229281 oz

Tags: NGTB30N1, NGTB30, NGTB3, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB30N135IHRWG 描述

***ical: Trans IGBT Chip N-CH 1350V 60A 394000mW 3-Pin(3+Tab) TO-247 Tube

***Semiconductor: IGBT, 1350V 30A FS2-RC Induction Heating

***i-Key: IGBT 1350V 60A 394W TO247

***ark: DC Collector Current:60A

NGTB30N135IHRWG 更多信息

NGTB 25-75A Insulated Gate Bipolar Transistors: ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

型號	製造商	描述	庫存	價格
NGTB30N135IHRWG DISTI # NGTB30N135IHRWGOS-ND	ON Semiconductor	IGBT 1350V 60A 394W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	18In Stock	1020:$2.8371 510:$3.3640 120:$3.9517 30:$4.5597 1:$5.3700
NGTB30N135IHRWG DISTI # 97W6297	ON Semiconductor	IGBT, SINGLE, 1.35KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:394W,Collector Emitter Voltage V(br)ceo:1.35kV,No. of Pins:3Pins,Operating Temperature Max:175°C , RoHS Compliant: Yes	0	1:$5.3000 10:$4.5400
NGTB30N135IHRWG. DISTI # 14AC9855	ON Semiconductor	DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:394W,Collector Emitter Voltage V(br)ceo:1.35kV,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- , RoHS Compliant: Yes	0
NGTB30N135IHRWG DISTI # 863-NGTB30N135IHRWG	ON Semiconductor	IGBT Transistors 1350V/30A IGBT FSII TO-24 RoHS: Compliant	27	1:$5.1100 10:$4.3500 100:$3.7700 250:$3.5800 500:$3.2100 1000:$2.7100 2500:$2.5700
NGTB30N135IHRWG	ON Semiconductor	RoHS: Not Compliant	72564	1000:$3.1500 500:$3.3100 100:$3.4500 25:$3.6000 1:$3.8700
NGTB30N135IHRWG DISTI # 7961343P	ON Semiconductor	IGBT 1350V 30A FIELD STOPDIODE TO247, TU	20	2:£3.8800 5:£3.8000 20:£3.7000 50:£3.6200
NGTB30N135IHRWG	ON Semiconductor	IGBT,1350V,30A,FS2-RC Induction Heating	16	1:$4.5700 100:$3.4300 500:$2.9400 1000:$2.7500
NGTB30N135IHRWG DISTI # 2399113	ON Semiconductor	RoHS: Compliant	0	1:$8.0900 10:$6.8900

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