PSMN1R5-30BLEJ

Mfr. #:: PSMN1R5-30BLEJ
製造商:: Nexperia
描述:: MOSFET N-CH 30V 120A D2PAK
生命週期:: 製造商新產品
數據表:: PSMN1R5-30BLEJ 數據表
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更多信息:: PSMN1R5-30BLEJ 更多信息

產品屬性
屬性值

製造商: 恩智浦半導體

產品分類: FET - 單

系列: -

打包: Digi-ReelR 替代包裝

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

技術: 矽

工作溫度: -55°C ~ 175°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: D2PAK

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 401W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 14934pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 120A (Tc)

Rds-On-Max-Id-Vgs: 1.5 mOhm @ 25A, 10V

Vgs-th-Max-Id: 2.15V @ 1mA

柵極電荷-Qg-Vgs: 228nC @ 10V

鈀功耗: 401 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 99.2 ns

上升時間: 156.1 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 120 A

Vds-漏-源-擊穿電壓: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.7 V

Rds-On-Drain-Source-Resistance: 1.3 mOhms

晶體管極性: N通道

典型關斷延遲時間: 191.8 ns

典型開啟延遲時間: 100.6 ns

Qg-門電荷: 228 nC

通道模式: 增強

Tags: PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PSMN1R5-30BLEJ 描述

***peria: PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK

***ure Electronics: Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package

***p One Stop Japan: Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET N-CH 30V D2PAK

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C

***nell: MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C

PSMN1R5-30BLEJ 更多信息

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Market price

型號	製造商	描述	庫存	價格
PSMN1R5-30BLEJ DISTI # V36:1790_06540853	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R	0
PSMN1R5-30BLEJ DISTI # V72:2272_06540853	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R	0
PSMN1R5-30BLEJ DISTI # 1727-1101-1-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	332In Stock	100:$2.0996 10:$2.6120 1:$2.9100
PSMN1R5-30BLEJ DISTI # 1727-1101-6-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	332In Stock	100:$2.0996 10:$2.6120 1:$2.9100
PSMN1R5-30BLEJ DISTI # 1727-1101-2-ND	Nexperia	MOSFET N-CH 30V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	On Order	1600:$1.4430 800:$1.7110
PSMN1R5-30BLEJ DISTI # PSMN1R5-30BLEJ	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	48000:$1.2418 24000:$1.2725 14400:$1.3047 9600:$1.3386 4800:$1.3562
PSMN1R5-30BLEJ DISTI # PSMN1R5-30BLEJ	Nexperia	Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0
PSMN1R5-30BLEJ. DISTI # 23AC9025	Nexperia	Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins	0	48000:$1.2500 24000:$1.2800 14400:$1.3100 9600:$1.3400 1:$1.3600
PSMN1R5-30BLEJ DISTI # 771-PSMN1R5-30BLEJ	Nexperia	MOSFET N-channel 30 V 1.5 mo FET RoHS: Compliant	3854	1:$2.7200 10:$2.3100 100:$2.0100 250:$1.9000 500:$1.7100 800:$1.4400 2400:$1.3700 4800:$1.3200
PSMN1R5-30BLEJ DISTI # 2281225	Nexperia	MOSFET, N-CH, 30V, 120A, D2PAK RoHS: Compliant	0	2500:$2.0900 1000:$2.2000 500:$2.3100 250:$2.4300 100:$2.5800 25:$2.8000 10:$3.1300 1:$3.4600
PSMN1R5-30BLEJ DISTI # 2281225	Nexperia	MOSFET, N-CH, 30V, 120A, D2PAK RoHS: Compliant	0	500:£1.1100 250:£1.4600 100:£1.5600 10:£1.7800 1:£2.3700

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