IPW60R040CFD7XKSA1

IPW60R040CFD7XKSA1
Mfr. #:
IPW60R040CFD7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPW60R040CFD7XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R040CFD7XKSA1 Datasheet
ECAD Model:
更多信息:
IPW60R040CFD7XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
50 A
Rds On - 漏源電阻:
40 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
109 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
227 W
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
CoolMOS CFD7
品牌:
英飛凌科技
秋季時間:
6 ns
產品類別:
MOSFET
上升時間:
19 ns
出廠包裝數量:
240
子類別:
MOSFET
典型關斷延遲時間:
112 ns
典型的開啟延遲時間:
36 ns
第 # 部分別名:
IPW60R040CFD7 SP001686068
Tags
IPW60R040, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 SJ High Voltage MOSFET 600V 40mOhm TO-247
***ronik
N-CH 600V 50A 40mOhm TO-247-3
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 50A, 150Deg C, 227W; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 50A, 150DEG C, 227W; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:227W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 50A, 150° C, 227W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.031ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
型號 製造商 描述 庫存 價格
IPW60R040CFD7XKSA1
DISTI # IPW60R040CFD7XKSA1-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 720:$7.8182
  • 240:$8.9783
  • 25:$10.3400
  • 10:$10.8450
  • 1:$12.0000
IPW60R040CFD7XKSA1
DISTI # IPW60R040CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 40mOhm TO-247 - Rail/Tube (Alt: IPW60R040CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$6.0900
  • 1440:$6.1900
  • 960:$6.3900
  • 480:$6.5900
  • 240:$6.8900
IPW60R040CFD7XKSA1
DISTI # 71AC0407
Infineon Technologies AGMOSFET, 600V, 50A, 150DEG C, 227W,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes236
  • 500:$8.4000
  • 250:$9.1100
  • 100:$9.5000
  • 50:$10.1400
  • 25:$10.7700
  • 10:$11.2400
  • 1:$12.3200
IPW60R040CFD7XKSA1
DISTI # 726-IPW60R040CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$11.4200
  • 10:$10.3200
  • 25:$9.8400
  • 100:$8.5500
  • 250:$8.1600
  • 500:$7.4400
IPW60R040CFD7XKSA1
DISTI # 2916149
Infineon Technologies AGMOSFET, 600V, 50A, 150DEG C, 227W
RoHS: Compliant
236
  • 250:$9.6200
  • 100:$9.9100
  • 50:$10.4600
  • 10:$11.0500
  • 5:$12.5000
  • 1:$13.3700
IPW60R040CFD7XKSA1
DISTI # 2916149
Infineon Technologies AGMOSFET, 600V, 50A, 150DEG C, 227W236
  • 100:£6.7900
  • 50:£7.3000
  • 10:£7.8100
  • 5:£9.0600
  • 1:£9.6400
圖片 型號 描述
NSP4201MR6T1G

Mfr.#: NSP4201MR6T1G

OMO.#: OMO-NSP4201MR6T1G

TVS Diodes / ESD Suppressors MI TSOP6 LO CAP DIODE ARR
NCP1339GDR2G

Mfr.#: NCP1339GDR2G

OMO.#: OMO-NCP1339GDR2G

Switching Controllers HIGH VOLTAGE QUASI RES CONTROLLER
NCP1339EDR2G

Mfr.#: NCP1339EDR2G

OMO.#: OMO-NCP1339EDR2G

Switching Controllers HIGH VOLTAGE QUASI RES CONTROLLER
LT3045EMSE#PBF

Mfr.#: LT3045EMSE#PBF

OMO.#: OMO-LT3045EMSE-PBF

LDO Voltage Regulators 20V, 500mA, Ultralow Noise, Ultrahigh PSRR Linear Regulator
HMK316AC7225KL-TE

Mfr.#: HMK316AC7225KL-TE

OMO.#: OMO-HMK316AC7225KL-TE

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 100VDC 2.2uF 10% X7S
TLV2316IDR

Mfr.#: TLV2316IDR

OMO.#: OMO-TLV2316IDR

Operational Amplifiers - Op Amps 10-MHz, Low-Noise, RRIO, CMOS Operational Amplifier for Cost-Sensitive Systems 8-SOIC -40 to 125
C3216C0G2J103J160AE

Mfr.#: C3216C0G2J103J160AE

OMO.#: OMO-C3216C0G2J103J160AE

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 630V 10nF 5% SOFT 1.60mm
TLV2316IDR

Mfr.#: TLV2316IDR

OMO.#: OMO-TLV2316IDR-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps TLVx316 10-MHz, Low-Noise, RRIO, CMOS Operational Amplifier 8-SOIC -40 to 125
NSP4201MR6T1G

Mfr.#: NSP4201MR6T1G

OMO.#: OMO-NSP4201MR6T1G-ON-SEMICONDUCTOR

TVS DIODE 5V 12V 6TSOP
VLS6045EX-220M-H

Mfr.#: VLS6045EX-220M-H

OMO.#: OMO-VLS6045EX-220M-H-TDK

Fixed Inductors 22uH 0.105ohms 2.4A AEC-Q200
可用性
庫存:
Available
訂購:
1000
輸入數量:
IPW60R040CFD7XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$11.42
US$11.42
10
US$10.32
US$103.20
25
US$9.84
US$246.00
100
US$8.55
US$855.00
250
US$8.16
US$2 040.00
500
US$7.44
US$3 720.00
從...開始
最新產品
Top