BSG0813NDIATMA1

Mfr. #:: BSG0813NDIATMA1
製造商:: Infineon Technologies
描述:: MOSFET LV POWER MOS
生命週期:: 製造商新產品
數據表:: BSG0813NDIATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TISON-8

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 25 V

商品名：: 優化MOS

打包：: 捲軸

高度：: 1.15 mm

長度：: 6 mm

系列：: OptiMOS 5

寬度：: 5 mm

品牌：: 英飛凌科技

產品類別：: MOSFET

出廠包裝數量：: 5000

子類別：: MOSFET

第 # 部分別名：: BSG0813NDI SP001241676

Tags: BSG0813NDIA, BSG0813NDI, BSG0813, BSG08, BSG0, BSG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSG0813NDIATMA1 描述

***ineon SCT: OptiMOS™ 5 Power Block is a leadless SMD package in a 5, PG-TISON-8, RoHS

***et: Transistor MOSFET Array Dual N-CH 25V 50A 8-Pin TISON T/R

***el Electronic: Cap Ceramic 3.6pF 25V C0G 0.25pF Pad SMD 01005 125C T/R

***ical: Trans MOSFET N-CH 25V 31A/50A T/R

***ure Electronics: ASP: 25V 50A 1.2mOhm TISON-8-4

***i-Key Marketplace: BSG0813 - 12V-300V N-CHANNEL POW

***i-Key: MOSFET 2N-CH 25V 19A/33A TISON8

***ineon: OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator

***ineon SCT: OptiMOS™ 5 Power Block is a leadless SMD package in a 5, PG-TISON-8, RoHS

***et: Transistor MOSFET Array Dual N-CH 25V 50A 8-Pin TISON T/R

***i-Key: MOSFET 2N-CH 25V 19A/39A 8TISON

***el Electronic: CAP CER 3.5PF 25V C0G/NP0 01005

***ineon: OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator

*** Source Electronics: MOSFET 2N-CH 25V 19A/41A 8TISON / Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R

***ark: Mosfet, N-Ch, 25V, 50A, 150Deg C, 6.25W; Channel Type:n Channel; Drain Source Voltage Vds N Channel:25V; Drain Source Voltage Vds P Channel:25V; Continuous Drain Current Id N Channel:50A; Continuous Drain Current Id P Channel:50A Rohs Compliant: Yes

***nell: MOSFET, DUAL N-CH, 25V, 50A, TISON; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 6.25W; Transistor Case Style: TISON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator

***et: Trans MOSFET N-CH 25V 27A 8-Pin SOIC N T/R

***nell: MOSFET, N CHANNEL, 25V, 40A, SOIC-8, FUL

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:36000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0032ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes

***ure Electronics: Si4630DY Series Single N-Channel 25 V 2.7 mOhms 7.8 W SMT Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 25V 27A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:36A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes

***Yang: Transistor MOSFET Array Dual N-CH 25V 60A/110A 8-Pin PQFN T/R - Tape and Reel

***emi: Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 25V

***ark: PT9 N 30/12 & PT9 N 25/12 S in PowerClip 56 - 8LD, PQFN, POWERCLIP DUAL, 5.0X6.0 MM, MULTIPHASE

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.

***ical: Trans MOSFET N-CH 25V 18A 8-Pin TSDSON EP T/R

***ark: MOSFET, N-CH, 25V, 40A, 150DEG C, 30W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

***ineon SCT: With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

Market price

型號	製造商	描述	庫存	價格
BSG0813NDIATMA1 DISTI # 31074350	Infineon Technologies AG	Trans MOSFET N-CH 25V 31A/50A T/R RoHS: Compliant	5000	5000:$1.0382
BSG0813NDIATMA1 DISTI # BSG0813NDIATMA1-ND	Infineon Technologies AG	MOSFET 2N-CH 25V 19A/33A 8TISON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.0193
BSG0813NDIATMA1 DISTI # C1S322000625084	Infineon Technologies AG	MOSFETs	5000	5000:$0.9720
BSG0813NDIATMA1 DISTI # BSG0813NDIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 19A/33A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0813NDIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.0269 10000:$0.9899 20000:$0.9539 30000:$0.9219 50000:$0.9049
BSG0813NDIATMA1 DISTI # BSG0813NDI	Infineon Technologies AG	Trans MOSFET N-CH 25V 19A/33A 10-Pin TISON8-4 T/R (Alt: BSG0813NDI) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSG0813NDIATMA1 DISTI # 726-BSG0813NDIATMA1	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$2.1000 10:$1.7900 100:$1.4300 500:$1.2500 1000:$1.0400 2500:$0.9630 5000:$0.9270

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