OMO ElectronicOMO Electronic
Expand menu
0 購物車

SI4850BDY-T1-GE3

SI4850BDY-T1-GE3
Mfr. #:
SI4850BDY-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 60V Vds 20V Vgs SO-8
生命週期:
製造商新產品
數據表:
SI4850BDY-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4850BDY-T1-GE3 DatasheetSI4850BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
更多信息:
SI4850BDY-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SO-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
11.3 A
Rds On - 漏源電阻：
19.5 mOhms
Vgs th - 柵源閾值電壓：
2.8 V
Vgs - 柵源電壓：
2.8 V
Qg - 門電荷：
11.1 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
4.5 W
配置：
單身的
打包：
捲軸
品牌：
威世 / Siliconix
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
21 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
10 ns
典型的開啟延遲時間：
7 ns
Tags
SI4850, SI485, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 60V 11.3A 8-Pin SOIC
***ical
Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R
***ark
Mosfet, N-Ch, 60V, 11.3A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SI4850BDY-T1-GE3
DISTI # V72:2272_21388877		Vishay IntertechnologiesSI4850BDY-T1-GE34994
  • 75000:$0.3839
  • 30000:$0.3871
  • 15000:$0.3902
  • 6000:$0.3933
  • 3000:$0.3965
  • 1000:$0.4253
  • 500:$0.5185
  • 250:$0.6037
  • 100:$0.6238
  • 50:$0.7221
  • 25:$0.8025
  • 10:$0.8835
  • 1:$1.0881
SI4850BDY-T1-GE3
DISTI # V99:2348_21388877		Vishay IntertechnologiesSI4850BDY-T1-GE30
  • 5000000:$0.4155
  • 2500000:$0.4156
  • 500000:$0.4161
  • 5000:$0.4167
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4950In Stock
  • 1000:$0.4599
  • 500:$0.5826
  • 100:$0.7052
  • 10:$0.9050
  • 1:$1.0100
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4950In Stock
  • 1000:$0.4599
  • 500:$0.5826
  • 100:$0.7052
  • 10:$0.9050
  • 1:$1.0100
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V SO-8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.3771
  • 12500:$0.3810
  • 5000:$0.3959
  • 2500:$0.4167
SI4850BDY-T1-GE3
DISTI # 32907528		Vishay IntertechnologiesSI4850BDY-T1-GE34994
  • 15000:$0.3902
  • 6000:$0.3933
  • 3000:$0.3965
  • 1000:$0.4253
  • 500:$0.5185
  • 250:$0.6037
  • 100:$0.6238
  • 50:$0.7221
  • 25:$0.8025
  • 16:$0.8835
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 11.3A ID 8-Pin SOIC T/R - Tape and Reel (Alt: SI4850BDY-T1-GE3)
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3629
  • 25000:$0.3729
  • 15000:$0.3839
  • 10000:$0.3999
  • 5000:$0.4119
SI4850BDY-T1-GE3
DISTI # SI4850BDY-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 60V 11.3A 8-Pin SOIC (Alt: SI4850BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500		Asia - 0
    SI4850BDY-T1-GE3
    DISTI # SI4850BDY-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 11.3A ID 8-Pin SOIC T/R (Alt: SI4850BDY-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.3879
    • 500:€0.3949
    • 100:€0.4019
    • 50:€0.4169
    • 25:€0.4519
    • 10:€0.5249
    • 1:€0.7699
    SI4850BDY-T1-GE3
    DISTI # 59AC7483    		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
    • 10000:$0.3600
    • 6000:$0.3690
    • 4000:$0.3830
    • 2000:$0.4260
    • 1000:$0.4680
    • 1:$0.4880
    SI4850BDY-T1-GE3
    DISTI # 50AC9665    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 11.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes4990
    • 500:$0.5440
    • 250:$0.5890
    • 100:$0.6330
    • 50:$0.6970
    • 25:$0.7610
    • 10:$0.8250
    • 1:$1.0100
    SI4850BDY-T1-GE3
    DISTI # 78-SI4850BDY-T1-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant    		4967
    • 1:$1.0000
    • 10:$0.8170
    • 100:$0.6270
    • 500:$0.5390
    • 1000:$0.4260
    • 2500:$0.3970
    • 5000:$0.3780
    • 10000:$0.3630
    SI4850BDY-T1-GE3
    DISTI # 2846625    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 11.3A, SOIC
    RoHS: Compliant    		4990
    • 1000:$0.6940
    • 500:$0.8780
    • 100:$1.0700
    • 5:$1.3700
    SI4850BDY-T1-GE3
    DISTI # 2846625    		Vishay IntertechnologiesMOSFET, N-CH, 60V, 11.3A, SOIC4990
    • 500:£0.4120
    • 250:£0.4460
    • 100:£0.4790
    • 10:£0.6780
    • 1:£0.8710
    圖片 型號 描述
    2N7002

    Mfr.#: 2N7002

    OMO.#: OMO-2N7002

    		 MOSFET N-CHANNEL 60V 115mA
    STP60NF10

    Mfr.#: STP60NF10

    OMO.#: OMO-STP60NF10

    		 MOSFET N-Ch 100 Volt 80 Amp
    RC0603FR-071KL

    Mfr.#: RC0603FR-071KL

    OMO.#: OMO-RC0603FR-071KL

    		 Thick Film Resistors - SMD 1K OHM 1%
    STS8N6LF6AG

    Mfr.#: STS8N6LF6AG

    OMO.#: OMO-STS8N6LF6AG

    		 MOSFET Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
    STP60NF10

    Mfr.#: STP60NF10

    OMO.#: OMO-STP60NF10-STMICROELECTRONICS

    		 MOSFET N-CH 100V 80A TO-220
    0454008.MR

    Mfr.#: 0454008.MR

    OMO.#: OMO-0454008-MR-LITTELFUSE

    		 Surface Mount Fuses 72V 8A Slo-Blo
    2N7002

    Mfr.#: 2N7002

    OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 115MA SOT-23
    AC0603KRX7R9BB103

    Mfr.#: AC0603KRX7R9BB103

    OMO.#: OMO-AC0603KRX7R9BB103-YAGEO

    		 Cap Ceramic 0.01uF 50V X7R 10% SMD 0603 125C Paper T/R
    STS8N6LF6AG

    Mfr.#: STS8N6LF6AG

    OMO.#: OMO-STS8N6LF6AG-STMICROELECTRONICS

    		 MOSFET N-CHANNEL 60V 8A 8SO
    RC0603FR-07100KL

    Mfr.#: RC0603FR-07100KL

    OMO.#: OMO-RC0603FR-07100KL-YAGEO

    		 Thick Film Resistors - SMD 100K OHM 1%
    可用性
    庫存:
    Available
    訂購:
    1987
    輸入數量:
    SI4850BDY-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.00
    US$1.00
    10
    US$0.82
    US$8.17
    100
    US$0.63
    US$62.70
    500
    US$0.54
    US$269.50
    1000
    US$0.43
    US$426.00
    從...開始
    最新產品
    • SiA468DJ-T1-GE3 TrenchFET® Power MOSFET
      SiA468DJ-T1-GE3 TrenchFET® Power MOSFET
      The Vishay Siliconix SiA468DJ provides the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.
    • ThunderFETs
      ThunderFETs
      Vishay's ThunderFETs have excellent efficiency in high density power supplies and are also compatible with all common MOSFET control circuits.
    • SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE
      SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE
      Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
    • SIC46 microBUCK Series
      SIC46 microBUCK Series
      Vishay Siliconix's SiC46 high efficiency synchronous buck regulators with integrated high-side and low-side power MOSFETs.
    • Compare SI4850BDY-T1-GE3
      Compare SI4850BDY-T1-GE3
      SI4850 vs SI4850BDYT1GE3 vs SI4850DET1E3
    • DGQ2788A AEC-Q100 Qualified Analog Switch
      DGQ2788A AEC-Q100 Qualified Analog Switch
      The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
    More Newest Products
    Top