RGT50TS65DGC11

RGT50TS65DGC11
Mfr. #:
RGT50TS65DGC11
製造商:
ROHM Semiconductor
描述:
IGBT Transistors 650V 25A IGBT Stop Trench
生命週期:
製造商新產品
數據表:
RGT50TS65DGC11 數據表
交貨:
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ECAD Model:
更多信息:
RGT50TS65DGC11 更多信息
產品屬性
屬性值
製造商:
羅姆半導體
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-247-3
安裝方式:
通孔
集電極-發射極電壓 VCEO 最大值:
650 V
集電極-發射極飽和電壓:
1.65 V
最大柵極發射極電壓:
30 V
25 C 時的連續集電極電流:
48 A
Pd - 功耗:
174 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 175 C
系列:
RGT50TS65D
打包:
管子
連續集電極電流 Ic 最大值:
48 A
工作溫度範圍:
- 40 C to + 175 C
品牌:
羅姆半導體
連續集電極電流:
25 A
柵極-發射極漏電流:
+/- 200 nA
產品類別:
IGBT晶體管
出廠包裝數量:
450
子類別:
IGBT
第 # 部分別名:
RGT50TS65D
單位重量:
1.340411 oz
Tags
RGT50TS, RGT50T, RGT5, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 650V 48A 174000mW 3-Pin(3+Tab) TO-247N Bulk
***ment14 APAC
IGBT, SINGLE, 650V, 48A, TO-247N-3
***i-Key
IGBT TRNCH FIELD 650V 48A TO247N
***nell
IGBT, SINGLE, 650V, 48A, TO-247N-3; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 174W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors FS1TIGBT TO247 30A 650V
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 47A 192000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***S
French Electronic Distributor since 1988
***i-Key Marketplace
IRGP6630D - IGBT WITH ULTRAFAST
***nell
IGBT, 600V, 47A, TO-247AC-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ark
IGBT Single Transistor, 53 A, 1.65 V, 200 W, 600 V, TO-247AC, 3
***(Formerly Allied Electronics)
IRGP6640D-EPBF, IGBT Transistor, 53 A 600 V, 3-Pin TO-247 | Infineon IRGP6640D-EPBF
***ical
Trans IGBT Chip N-CH 600V 53A 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, 600V, 53A, TO-247AC-3; DC Collector Current: 53A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
型號 製造商 描述 庫存 價格
RGT50TS65DGC11
DISTI # RGT50TS65DGC11-ND
ROHM SemiconductorIGBT 650V 48A 174W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube
434In Stock
  • 2500:$1.6660
  • 1000:$1.7493
  • 500:$2.0742
  • 250:$2.3116
  • 100:$2.5615
  • 25:$2.8112
  • 10:$3.1240
  • 1:$3.5000
RGT50TS65DGC11
DISTI # RGT50TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 48A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGT50TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.7900
  • 900:$1.6900
  • 1800:$1.5900
  • 2700:$1.4900
  • 4500:$1.4900
RGT50TS65DGC11
DISTI # 76Y4986
ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3,DC Collector Current:48A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:174W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes52
  • 500:$1.6500
  • 250:$1.7100
  • 100:$2.0300
  • 50:$2.3400
  • 25:$2.5000
  • 10:$2.8600
  • 1:$3.3000
RGT50TS65DGC11
DISTI # 755-RGT50TS65DGC11
ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
412
  • 1:$3.1500
  • 10:$2.6800
  • 100:$2.3300
  • 250:$2.2100
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
RGT50TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 20:$3.6400
  • 6:$4.0040
  • 1:$5.4600
RGT50TS65DGC11ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
Americas -
    RGT50TS65DGC11
    DISTI # 2519782
    ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3
    RoHS: Compliant
    52
    • 500:£1.3600
    • 250:£1.5200
    • 100:£1.5900
    • 10:£1.8400
    • 1:£2.7000
    RGT50TS65DGC11
    DISTI # 2519782
    ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3
    RoHS: Compliant
    52
    • 250:$3.3300
    • 100:$3.5100
    • 10:$4.0400
    • 1:$4.7500
    RGT50TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.4600
    • 10:$2.8400
    • 50:$2.2900
    • 100:$1.9500
    • 500:$1.8500
    • 1000:$1.8200
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    可用性
    庫存:
    412
    訂購:
    2395
    輸入數量:
    RGT50TS65DGC11的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$3.15
    US$3.15
    10
    US$2.68
    US$26.80
    100
    US$2.33
    US$233.00
    250
    US$2.21
    US$552.50
    500
    US$1.98
    US$990.00
    1000
    US$1.67
    US$1 670.00
    2500
    US$1.59
    US$3 975.00
    5000
    US$1.53
    US$7 650.00
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