IRFU6215PBF

IRFU6215PBF
Mfr. #:
IRFU6215PBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
生命週期:
製造商新產品
數據表:
IRFU6215PBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-251-3
通道數:
1 Channel
晶體管極性:
P-通道
Vds - 漏源擊穿電壓:
150 V
Id - 連續漏極電流:
13 A
Rds On - 漏源電阻:
295 mOhms
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
44 nC
Pd - 功耗:
110 W
配置:
單身的
打包:
管子
高度:
6.22 mm
長度:
6.73 mm
晶體管類型:
1 P-Channel
寬度:
2.38 mm
品牌:
英飛凌科技
產品類別:
MOSFET
出廠包裝數量:
3000
子類別:
MOSFET
第 # 部分別名:
SP001557816
單位重量:
0.139332 oz
Tags
IRFU6, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK
***ineon SCT
-150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 150V 18A IPAK
***ser
MOSFETs 150V NCh PowerMOSFET UltraFET
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 100 V 115 mOhm 29.3 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 115 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
***ment14 APAC
MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):115mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:79W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:16A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRFU3910; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ineon SCT
Automotive Q101 250V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ark
TUBE / Automotive Logic Level MOSFET 250V, 9.3A, 375 mOhm, 13 nC Qg, IPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***et Europe
Trans MOSFET P-CH 50V 9.9A 3-Pin(3+Tab) IPAK
***ark
P CHANNEL MOSFET, -50V, 9.9A, IPAK; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:9.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, P, -50V, -9.9A, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.9A; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 42W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Alternate Case Style: I-PAK; On State resistance @ Vgs = 10V: 280mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; Turn Off Time: 12ns; Turn On Time: 57ns; Voltage Vds Typ: -50V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 100V, 7.7A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:42W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Alternate Case Style:I-PAK; Current Id Max:7.7A; Junction to Case Thermal Resistance A:0°C/W; On State resistance Vgs = 10V:270ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:31A; Turn Off Time:14ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
IRFU6215PBF
DISTI # V99:2348_13893020
Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
615
  • 25000:$0.4203
  • 10000:$0.4375
  • 2500:$0.4583
  • 1000:$0.5164
  • 500:$0.6474
  • 100:$0.7292
  • 10:$0.9292
  • 1:$1.0727
IRFU6215PBF
DISTI # IRFU6215PBF-ND
Infineon Technologies AGMOSFET P-CH 150V 13A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
9497In Stock
  • 1050:$0.6105
  • 525:$0.7733
  • 150:$0.9971
  • 75:$1.1396
  • 1:$1.4200
IRFU6215PBF
DISTI # 26946479
Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
2064
  • 1000:$0.4472
  • 500:$0.4608
  • 250:$0.4752
  • 100:$0.4905
  • 24:$0.5068
IRFU6215PBF
DISTI # 26198472
Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
615
  • 500:$0.6474
  • 100:$0.7292
  • 16:$0.9292
IRFU6215PBF
DISTI # IRFU6215PBF
Infineon Technologies AGTrans MOSFET P-CH 150V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU6215PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.4259
  • 6000:$0.4109
  • 12000:$0.3959
  • 18000:$0.3819
  • 30000:$0.3759
IRFU6215PBF
DISTI # 70018383
Infineon Technologies AGMOSFET,P-CHANNEL,-150V,-13A,580 MOHM,44 NC QG,I-PAK
RoHS: Compliant
0
  • 750:$1.3300
IRFU6215PBFInternational Rectifier 
RoHS: Not Compliant
1050
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
IRFU6215PBF
DISTI # 942-IRFU6215PBF
Infineon Technologies AGMOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
RoHS: Compliant
6690
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.7040
  • 1000:$0.5550
  • 2500:$0.4930
  • 10000:$0.4740
IRFU6215PBF
DISTI # 8303240P
Infineon Technologies AGHEXFET P-CH MOSFET 13A 150V IPAK, TU245
  • 50:£0.6750
  • 200:£0.5860
  • 500:£0.5180
IRFU6215PBF
DISTI # 8303240
Infineon Technologies AGHEXFET P-CH MOSFET 13A 150V IPAK, PK120
  • 10:£0.8060
  • 50:£0.6750
  • 200:£0.5860
  • 500:£0.5180
IRFU6215PBF
DISTI # IRFU6215PBF
Infineon Technologies AGTransistor: P-MOSFET,unipolar,-150V,-13A,110W,IPAK177
  • 1:$0.8791
  • 3:$0.7841
  • 10:$0.6611
  • 75:$0.5865
IRFU6215PBF
DISTI # C1S322000497074
Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
615
  • 500:$0.6475
  • 100:$0.7423
  • 10:$0.9372
IRFU6215PBF
DISTI # 8659184
Infineon Technologies AG 
RoHS: Compliant
0
  • 1:$1.9400
  • 10:$1.6500
  • 100:$1.2600
  • 500:$1.1200
  • 1000:$0.8780
  • 2500:$0.8360
圖片 型號 描述
OPA196ID

Mfr.#: OPA196ID

OMO.#: OMO-OPA196ID

Operational Amplifiers - Op Amps LOW-POWER 36-V PRECISION CMOS OPAMP
MCP2542WFDT-H/MNY

Mfr.#: MCP2542WFDT-H/MNY

OMO.#: OMO-MCP2542WFDT-H-MNY

CAN Interface IC CAN FD Transceiver
LTV-352T

Mfr.#: LTV-352T

OMO.#: OMO-LTV-352T

Transistor Output Optocouplers Optocoupler Photodarlington
X-NUCLEO-IHM14A1

Mfr.#: X-NUCLEO-IHM14A1

OMO.#: OMO-X-NUCLEO-IHM14A1

Power Management IC Development Tools Stepper motor driver expansion board based on STSPIN820 for STM32 Nucleo
64600001003

Mfr.#: 64600001003

OMO.#: OMO-64600001003-LITTELFUSE

Fuse Holder 5X20MM PC MNT
LTV-352T

Mfr.#: LTV-352T

OMO.#: OMO-LTV-352T-LITE-ON

Transistor Output Optocouplers Optocoupler Photodarlington
X-NUCLEO-IHM14A1

Mfr.#: X-NUCLEO-IHM14A1

OMO.#: OMO-X-NUCLEO-IHM14A1-STMICROELECTRONICS

NUCLEO BOARD STSPIN820 DRIVER
VEC2315-TL-W

Mfr.#: VEC2315-TL-W

OMO.#: OMO-VEC2315-TL-W-ON-SEMICONDUCTOR

MOSFET 2P-CH 60V 2.5A VEC8
L1V1-407003V500000

Mfr.#: L1V1-407003V500000

OMO.#: OMO-L1V1-407003V500000-LUMILEDS

LED LUXEON WHITE SMD
ABM10AIG-16.000MHZ-4Z-T3

Mfr.#: ABM10AIG-16.000MHZ-4Z-T3

OMO.#: OMO-ABM10AIG-16-000MHZ-4Z-T3-ABRACON

全新原裝
可用性
庫存:
Available
訂購:
3500
輸入數量:
IRFU6215PBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$1.22
US$1.22
10
US$1.04
US$10.40
100
US$0.80
US$79.60
500
US$0.70
US$352.00
1000
US$0.56
US$555.00
2500
US$0.49
US$1 232.50
10000
US$0.47
US$4 740.00
25000
US$0.46
US$11 475.00
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