TGF2929-HM

TGF2929-HM
Mfr. #:
TGF2929-HM
製造商:
Qorvo
描述:
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
生命週期:
製造商新產品
數據表:
TGF2929-HM 數據表
交貨:
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ECAD Model:
更多信息:
TGF2929-HM 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
17.4 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
50 V
Vgs - 柵源擊穿電壓:
- 2.8 V
Id - 連續漏極電流:
7.2 A
輸出功率:
132 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
Pd - 功耗:
140 W
安裝方式:
貼片/貼片
打包:
胡扯
配置:
單身的
工作頻率:
DC to 3.5 GHz
工作溫度範圍:
- 40 C to + 85 C
系列:
轉化生長因子
品牌:
科沃
開發套件:
TGF2929-HM EVB1
濕氣敏感:
是的
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
25
子類別:
晶體管
第 # 部分別名:
1135635
Tags
TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic
***hardson RFPD
RF POWER TRANSISTOR
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
TGF2929-HM
DISTI # 772-TGF2929-HM
QorvoRF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
RoHS: Compliant
0
  • 25:$338.4400
TGF2929-HM-EVB
DISTI # 772-TGF2929-HM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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可用性
庫存:
25
訂購:
2008
輸入數量:
TGF2929-HM的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
25
US$338.44
US$8 461.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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