SI2333DS-T1-GE3

Mfr. #:: SI2333DS-T1-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
生命週期:: 製造商新產品
數據表:: SI2333DS-T1-GE3 數據表
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HTML Datasheet:: SI2333DS-T1-GE3 Datasheet SI2333DS-T1-GE3 Datasheet (P4-P6)SI2333DS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:: SI2333DS-T1-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SOT-23-3

商品名：: 溝槽場效應晶體管

打包：: 捲軸

高度：: 1.45 mm

長度：: 2.9 mm

系列：: SI2

寬度：: 1.6 mm

品牌：: 威世 / Siliconix

產品類別：: MOSFET

出廠包裝數量：: 3000

子類別：: MOSFET

第 # 部分別名：: SI2333DS-GE3

單位重量：: 0.000282 oz

Tags: SI2333DS-T, SI2333DS, SI2333D, SI2333, SI233, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2333DS-T1-GE3 描述

***et: Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R

***i-Key: MOSFET P-CH 12V 4.1A SOT23-3

***: P-CHANNEL 12-V (D-S) MOSFET

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:750mW

SI2333DS-T1-GE3 更多信息

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

型號	製造商	描述	庫存	價格
SI2333DS-T1-GE3 DISTI # V36:1790_09216809	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.3409 1500000:$0.3410 300000:$0.3506 30000:$0.3652 3000:$0.3675
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5850In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5850In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.3325 15000:$0.3360 6000:$0.3491 3000:$0.3675
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3199 18000:$0.3289 12000:$0.3379 6000:$0.3529 3000:$0.3629
SI2333DS-T1-GE3 DISTI # 84R8032	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 84R8032) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.4690 500:$0.5950 250:$0.6440 100:$0.6910 50:$0.7960 25:$0.9010 1:$1.1000
SI2333DS-T1-GE3 DISTI # 15R4914	Vishay Intertechnologies	P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):25mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes	0	10000:$0.3180 6000:$0.3250 4000:$0.3380 2000:$0.3750 1000:$0.4130 1:$0.4300
SI2333DS-T1-GE3 DISTI # 84R8032	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes	1670	1000:$0.4740 500:$0.6010 250:$0.6500 100:$0.6990 50:$0.8040 25:$0.9100 1:$1.1000
SI2333DS-T1-GE3 DISTI # 781-SI2333DS-GE3	Vishay Intertechnologies	MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V RoHS: Compliant	4820	1:$0.8700 10:$0.7200 100:$0.5520 500:$0.4750 1000:$0.3740 3000:$0.3490 6000:$0.3320 9000:$0.3250
SI2333DS-T1-GE3	Vishay Intertechnologies	MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V RoHS: Compliant	Americas -
SI2333DS-T1-GE3 DISTI # 1867182	Vishay Intertechnologies	P CH MOSFET RoHS: Compliant	1260	250:£0.5890 100:£0.6330 50:£0.7280 25:£0.8250 1:£0.9960
SI2333DS-T1-GE3 DISTI # 1867182	Vishay Intertechnologies	P CHANNEL MOSFET RoHS: Compliant	1670	3000:$0.5540 1000:$0.5650 500:$0.7170 100:$0.8330 10:$1.0900 1:$1.3100

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