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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPP06CN10N G DISTI # IPP06CN10NG-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TO-220 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPP06CN10LGXKSA1 DISTI # IPP06CN10LGXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPP06CN10NGXKSA1 DISTI # IPP06CN10NGXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TO-220 RoHS: Compliant Container: Tube | Limited Supply - Call | |
| IPP06CN10N G DISTI # SP000096463 | Infineon Technologies AG | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220AB (Alt: SP000096463) RoHS: Compliant Min Qty: 1 | Europe - 500 |
|
| IPP06CN10L G DISTI # IPP06CN10LG | Infineon Technologies AG | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP06CN10LG) RoHS: Not Compliant Min Qty: 250 Container: Bulk | Americas - 0 |
|
| IPP06CN10L G DISTI # 726-IPP06CN10LG | Infineon Technologies AG | MOSFET N-Ch 100V 100A TO220-3 RoHS: Compliant | 34 |
|
| IPP06CN10N G DISTI # 726-IPP06CN10NG | Infineon Technologies AG | MOSFET N-Ch 100V 100A TO220-3 RoHS: Compliant | 0 | |
| IPP06CN10LGHKSA1 DISTI # 726-IPP06CN10LGHKSA1 | Infineon Technologies AG | MOSFET RoHS: Compliant | 0 | |
| IPP06CN10LG | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 490 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: IPP072N10N3GXK OMO.#: OMO-IPP072N10N3GXK |
MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 |
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Mfr.#: IPP042N03LGXKSA1 OMO.#: OMO-IPP042N03LGXKSA1 |
MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 |
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Mfr.#: IPP052NE7N3G OMO.#: OMO-IPP052NE7N3G-1190 |
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IPP052N06L3GXK OMO.#: OMO-IPP052N06L3GXK-1190 |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 (Alt: SP000680802) |
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Mfr.#: IPP024N06N3G OMO.#: OMO-IPP024N06N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IPP032N06N OMO.#: OMO-IPP032N06N-1190 |
全新原裝 |
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Mfr.#: IPP065N04N OMO.#: OMO-IPP065N04N-1190 |
全新原裝 |
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Mfr.#: IPP070N06NG OMO.#: OMO-IPP070N06NG-1190 |
全新原裝 |
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Mfr.#: IPP075N15N OMO.#: OMO-IPP075N15N-1190 |
全新原裝 |
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Mfr.#: IPP037N06L3 G OMO.#: OMO-IPP037N06L3-G-124 |
Darlington Transistors MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 |