CD8067303592700S R3J5

Mfr. #:: CD8067303592700S R3J5
製造商:: Intel
描述:: CPU - Central Processing Units 64BIT MPU
生命週期:: 製造商新產品
數據表:: CD8067303592700S R3J5 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: CD8067303592700S R3J5 更多信息

產品屬性
屬性值

製造商：: 英特爾

產品分類：: CPU - 中央處理單元

RoHS：: Y

產品：: 服務器處理器

家庭：: 英特爾至強

核：: 英特爾至強

最大時鐘頻率：: 2.1 GHz

內存類型：: DDR4

高速緩存存儲器：: 22 MB

打包：: 托盤

系列：: 英特爾至強金牌

品牌：: 英特爾

產品類別：: CPU - 中央處理單元

出廠包裝數量：: 1

子類別：: 嵌入式處理器和控制器

商品名：: 英特爾至強

第 # 部分別名：: 958186

Tags: CD8067303592, CD806730359, CD80673035, CD8067303, CD8067, CD806, CD80, CD8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CD8067303592700S R3J5 描述

***et Europe: Microprocessor Xeon Gold 6154 3GHz 3647-Pin FCLGA Socket Support Tray

CD8067303592700S R3J5 更多信息

4th Generation Xeon® Processors: Intel 4th Generation Xeon® Processors are manufactured on the industry-leading 22nm process technology with 3D Tri-Gate transistors, deliver quad-core processing and intelligent performance capabilities, including Intel Turbo Boost Technology 2.0, and Hyper-Threading Technology. Additionally, it boosts performance to integer/matrix calculations through Intel Advanced Vector Extensions 2.0 enhancements.

4th Generation Processors: Intel's 4th generation Core Processor family delivers Desktop, Mobile, and Embedded products with maximum performance per watt. Intel Haswell Architecture is based on a 22nm process and utilizes FinFET technology for reduced leakage and lowered power consumption. Idle state power consumption has been lowered, creating a 20x improvement from the previous generation, with a 3 second wakeup time possible using Intel Rapid Start.

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