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IRFHS8242TRPBF

IRFHS8242TRPBF
Mfr. #:
IRFHS8242TRPBF
製造商:
Infineon Technologies
描述:
MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
生命週期:
製造商新產品
數據表:
IRFHS8242TRPBF 數據表
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HTML Datasheet:
IRFHS8242TRPBF DatasheetIRFHS8242TRPBF Datasheet (P4-P6)IRFHS8242TRPBF Datasheet (P7-P9)
ECAD Model:
更多信息:
IRFHS8242TRPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PQFN-6
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
25 V
Id - 連續漏極電流：
9.9 A
Rds On - 漏源電阻：
17 mOhms
Vgs th - 柵源閾值電壓：
1.8 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
4.3 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.1 W
配置：
單身的
打包：
捲軸
高度：
0.9 mm
長度：
2 mm
晶體管類型：
1 N-Channel
寬度：
2 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
19 S
秋季時間：
5.3 ns
產品類別：
MOSFET
上升時間：
19 ns
出廠包裝數量：
4000
子類別：
MOSFET
典型關斷延遲時間：
5.4 ns
典型的開啟延遲時間：
6.5 ns
第 # 部分別名：
SP001554858
Tags
IRFHS8242TRP, IRFHS82, IRFHS8, IRFHS, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 21 mOhm 4.3 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***ment14 APAC
N CH MOSFET, 25V, 9.9A, 6-PQFN; Transist; N CH MOSFET, 25V, 9.9A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:25V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:6
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
型號 製造商 描述 庫存 價格
IRFHS8242TRPBF
DISTI # C1S327400181699		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R
RoHS: Compliant		3950
  • 25:$0.1470
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF-ND		Infineon Technologies AGMOSFET N-CH 25V 9.9A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.1918
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHS8242TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1399
  • 8000:$0.1389
  • 16000:$0.1389
  • 24000:$0.1379
  • 40000:$0.1379
IRFHS8242TRPBF
DISTI # IRFHS8242TRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R (Alt: IRFHS8242TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFHS8242TRPBF
    DISTI # SP001554858    		Infineon Technologies AGTrans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R (Alt: SP001554858)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.2169
    • 8000:€0.1679
    • 16000:€0.1379
    • 24000:€0.1159
    • 40000:€0.1079
    IRFHS8242TRPBF
    DISTI # 13AC9104    		Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation RoHS Compliant: Yes3473
    • 1:$0.4900
    • 10:$0.4070
    • 25:$0.3540
    • 50:$0.3010
    • 100:$0.2480
    • 250:$0.2290
    • 500:$0.2110
    • 1000:$0.1920
    IRFHS8242TRPBF.
    DISTI # 32AC0691    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2.1W,No. of Pins:8Pins RoHS Compliant: Yes0
      IRFHS8242TRPBF
      DISTI # 70599963      		Infineon Technologies AGIRFHS8242TRPBF N-channel MOSFET Transistor,21 A,25 V,6-Pin PQFN
      RoHS: Compliant      		0
      • 100:$0.3700
      IRFHS8242TRPBFInfineon Technologies AGSingle N-Channel 25 V 21 mOhm 4.3 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
      RoHS: Compliant      		4000Reel
      • 4000:$0.1410
      IRFHS8242TRPBFInternational Rectifier 
      RoHS: Not Compliant      		8000
      • 500:$0.1500
      • 1000:$0.1500
      • 100:$0.1600
      • 25:$0.1700
      • 1:$0.1800
      IRFHS8242TRPBF
      DISTI # 942-IRFHS8242TRPBF      		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
      RoHS: Compliant      		5119
      • 1:$0.4900
      • 10:$0.4070
      • 100:$0.2480
      • 1000:$0.1920
      • 4000:$0.1640
      IRFHS8242TRPBFInternational Rectifier9.9A, 25V, 0.013OHM, N-CHANNEL, SI, POWER, MOSFET4
      • 1:$0.3800
      IRFHS8242TRPBF
      DISTI # 2725944      		Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN
      RoHS: Compliant      		3473
      • 1:$0.7750
      • 10:$0.6440
      • 100:$0.3930
      • 1000:$0.3040
      • 4000:$0.2600
      IRFHS8242TRPBF
      DISTI # 2725944      		Infineon Technologies AGMOSFET, N-CH, 25V, 8.5A, PQFN
      RoHS: Compliant      		3473
      • 5:£0.4420
      • 25:£0.1340
      • 100:£0.1310
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      可用性
      庫存:
      Available
      訂購:
      1988
      輸入數量:
      IRFHS8242TRPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.49
      US$0.49
      10
      US$0.41
      US$4.07
      100
      US$0.25
      US$24.80
      1000
      US$0.19
      US$192.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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