SI7629DN-T1-GE3

Mfr. #:: SI7629DN-T1-GE3
製造商:: Vishay
描述:: MOSFET P-CH 20V 35A 1212-8 PPAK
生命週期:: 製造商新產品
數據表:: SI7629DN-T1-GE3 數據表
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更多信息:: SI7629DN-T1-GE3 更多信息

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI7629DN-GE3

安裝方式: 貼片/貼片

包裝盒: PowerPAKR 1212-8

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: PowerPAKR 1212-8

配置: 單身的

FET型: MOSFET P 溝道，金屬氧化物

最大功率: 52W

晶體管型: 1 P-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: 5790pF @ 10V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 35A (Tc)

Rds-On-Max-Id-Vgs: 4.6 mOhm @ 20A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

柵極電荷-Qg-Vgs: 177nC @ 10V

鈀功耗: 52 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: - 35 A

Vds-漏-源-擊穿電壓: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 1.5 V

Rds-On-Drain-Source-Resistance: 3.8 mOhms

晶體管極性: P-通道

Qg-門電荷: 118 nC

正向跨導最小值: 64 S

Tags: SI7629DN-T, SI7629, SI762, SI76, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7629DN-T1-GE3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

型號	製造商	描述	庫存	價格
SI7629DN-T1-GE3 DISTI # V72:2272_09215664	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4923	3000:$0.4581 1000:$0.4798 500:$0.5511 250:$0.6026 100:$0.6235 25:$0.7641 10:$0.7672 1:$0.8873
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6691In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6691In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.4928
SI7629DN-T1-GE3 DISTI # 25789888	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4923	3000:$0.4581 1000:$0.4798 500:$0.5511 250:$0.6026 100:$0.6235 25:$0.7641 16:$0.7672
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7629DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3229 6000:$0.3129 12000:$0.3009 18000:$0.2919 30000:$0.2839
SI7629DN-T1-GE3 DISTI # 86R3929	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET	0	1:$0.5150 3000:$0.5150
SI7629DN-T1-GE3. DISTI # 30AC0202	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5150 3000:$0.5150
SI7629DN-T1-GE3 DISTI # 781-SI7629DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V 35A 52W RoHS: Compliant	3993	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.5350 3000:$0.5340
SI7629DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7629DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V 35A 52W RoHS: Compliant	Americas -
SI7629DN-T1-GE3 DISTI # C1S803601953764	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4923	250:$0.6219 100:$0.6236 25:$0.7643 10:$0.7674

相關產品

圖片	型號	描述
	Mfr.#: SI7629DN-T1-GE3 OMO.#: OMO-SI7629DN-T1-GE3	MOSFET 20V 35A 52W
	Mfr.#: SI7629DN-T1-GE3-CUT TAPE OMO.#: OMO-SI7629DN-T1-GE3-CUT-TAPE-1190	全新原裝
	Mfr.#: SI7629DN-T1 OMO.#: OMO-SI7629DN-T1-1190	全新原裝
	Mfr.#: SI7629DN-T1-GE3 OMO.#: OMO-SI7629DN-T1-GE3-VISHAY	MOSFET P-CH 20V 35A 1212-8 PPAK
	Mfr.#: SI7629DNT1GE3 OMO.#: OMO-SI7629DNT1GE3-1190	Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

可用性

庫存:: Available
訂購:: 2000
輸入數量:

SI7629DN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.43~~; ~~US$0.43~~

10: ~~US$0.40~~; ~~US$4.05~~

100: ~~US$0.38~~; ~~US$38.33~~

500: ~~US$0.36~~; ~~US$181.00~~

1000: ~~US$0.34~~; ~~US$340.70~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SI7629DN-T 3
SI7629 4
SI762 12
SI76 155
SI7 1547

SI7629DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes