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FDMS86180

FDMS86180
Mfr. #:
FDMS86180
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V/20V N-Channel PTNG MOSFET
生命週期:
製造商新產品
數據表:
FDMS86180 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDMS86180 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-56-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
151 A
Rds On - 漏源電阻：
2.4 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
84 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
138 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
系列：
FDMS86180
晶體管類型：
1 N-Channel
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
144 S
秋季時間：
7 ns
產品類別：
MOSFET
上升時間：
12 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
30 ns
典型的開啟延遲時間：
24 ns
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86180
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 151A, 3.2mΩ
***ure Electronics
N-Channel 100 V 3.2 mOhmShielded Gate PowerTrench Mosfet - Power56
***ark
100V/20V N-CHANNEL PTNG MOSFET
***et Europe
N-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
型號 製造商 描述 庫存 價格
FDMS86180
DISTI # V36:1790_17091597		ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET0
    FDMS86180
    DISTI # FDMS86180TR-ND    		ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 3000:$1.6076
    FDMS86180
    DISTI # FDMS86180CT-ND    		ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.7386
    • 500:$2.0615
    • 100:$2.4217
    • 10:$2.9560
    • 1:$3.2900
    FDMS86180
    DISTI # FDMS86180DKR-ND    		ON SemiconductorMOSFET N-CH 100V 151A 8PQFN
    RoHS: Not compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.7386
    • 500:$2.0615
    • 100:$2.4217
    • 10:$2.9560
    • 1:$3.2900
    FDMS86180
    DISTI # FDMS86180    		ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET 100V Drain to Source Voltage 151A Continuous Drain Current 138W Power Dissipation Surface Mount 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86180)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 12000:$1.7900
    • 18000:$1.7900
    • 30000:$1.7900
    • 3000:$1.8900
    • 6000:$1.8900
    FDMS86180
    DISTI # 18AC7314    		ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 56,Transistor Polarity:N Channel,Continuous Drain Current Id:151A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.2V,Power RoHS Compliant: Yes0
    • 1000:$1.5900
    • 500:$1.8800
    • 250:$2.1000
    • 100:$2.2100
    • 50:$2.3300
    • 25:$2.4400
    • 10:$2.5600
    • 1:$3.0100
    FDMS86180
    DISTI # 24AC8554    		ON SemiconductorFET 100V 3.2 MOHM PQFN56 / REEL0
    • 30000:$1.3900
    • 18000:$1.4100
    • 12000:$1.4700
    • 6000:$1.5800
    • 3000:$1.6900
    • 1:$1.7700
    FDMS86180
    DISTI # 512-FDMS86180    		ON SemiconductorMOSFET 100V/20V N-Channel PTNG MOSFET
    RoHS: Compliant    		0
    • 1:$3.0300
    • 10:$2.5800
    • 100:$2.2300
    • 250:$2.1200
    • 500:$1.9000
    • 1000:$1.6000
    • 3000:$1.5200
    FDMS86180
    DISTI # 2762548    		ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 56
    RoHS: Compliant    		0
    • 3000:$2.3400
    • 1000:$2.4600
    • 500:$2.9200
    • 250:$3.2600
    • 100:$3.4300
    • 10:$3.9700
    • 1:$4.6700
    FDMS86180
    DISTI # 2762548    		ON SemiconductorMOSFET, N-CH, 100V, 151A, POWER 560
    • 500:£1.4800
    • 250:£1.6500
    • 100:£1.7300
    • 10:£2.0100
    • 1:£2.6600
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    可用性
    庫存:
    Available
    訂購:
    1000
    輸入數量:
    FDMS86180的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.03
    US$3.03
    10
    US$2.58
    US$25.80
    100
    US$2.23
    US$223.00
    250
    US$2.12
    US$530.00
    500
    US$1.90
    US$950.00
    1000
    US$1.60
    US$1 600.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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