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FDB8160_F085

FDB8160_F085
Mfr. #:
FDB8160_F085
製造商:
Fairchild Semiconductor
描述:
IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
生命週期:
製造商新產品
數據表:
FDB8160_F085 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商
仙童半導體
產品分類
晶體管 - FET、MOSFET - 單
打包
捲軸
單位重量
0.046296 oz
安裝方式
貼片/貼片
包裝盒
TO-252-3
技術
矽
通道數
1 Channel
晶體管型
1 N-Channel
鈀功耗
254 W
秋季時間
27 ns
上升時間
18.9 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
80 A
Vds-漏-源-擊穿電壓
30 V
VGS-th-Gate-Source-Threshold-Voltage
2.9 V
Rds-On-Drain-Source-Resistance
1.5 mOhms
晶體管極性
N通道
Qg-門電荷
187 nC
Tags
FDB816, FDB81, FDB8, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk
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MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
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Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
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MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:87A; On Resistance, Rds(on):6.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
FDB8160-F085
DISTI # FDB8160-F085TR-ND		ON SemiconductorMOSFET N-CH 30V 80A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    FDB8160-F085
    DISTI # FDB8160-F085CT-ND    		ON SemiconductorMOSFET N-CH 30V 80A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDB8160-F085
      DISTI # FDB8160-F085DKR-ND      		ON SemiconductorMOSFET N-CH 30V 80A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDB8160_F085
        DISTI # FDB8160-F085        		ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB8160-F085)
        Min Qty: 234
        Container: Bulk        		Americas - 0
        • 234:$1.2900
        • 468:$1.2900
        • 702:$1.2900
        • 1170:$1.2900
        • 2340:$1.2900
        FDB8160-F085
        DISTI # 48AC0890        		ON SemiconductorNMOS D2PAK 30V 1.8 MOHM / REEL0
          FDB8160-F085Fairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		781
          • 1000:$1.4100
          • 500:$1.4800
          • 100:$1.5400
          • 25:$1.6100
          • 1:$1.7300
          圖片 型號 描述
          FDB8160-F085

          Mfr.#: FDB8160-F085

          OMO.#: OMO-FDB8160-F085

          		 MOSFET 30V N-Channel PowerTrench MOSFET
          FDB8160_F085

          Mfr.#: FDB8160_F085

          OMO.#: OMO-FDB8160-F085-126

          		 IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
          FDB8160

          Mfr.#: FDB8160

          OMO.#: OMO-FDB8160-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 80A D2PAK
          FDB8160-F085

          Mfr.#: FDB8160-F085

          OMO.#: OMO-FDB8160-F085-ON-SEMICONDUCTOR

          		 MOSFET N-CH 30V 80A D2PAK
          可用性
          庫存:
          Available
          訂購:
          3000
          輸入數量:
          FDB8160_F085的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格（美元）
          數量
          單價
          小計金額
          1
          US$1.94
          US$1.94
          10
          US$1.84
          US$18.38
          100
          US$1.74
          US$174.15
          500
          US$1.64
          US$822.40
          1000
          US$1.55
          US$1 548.00
          由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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