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IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1
Mfr. #:
IPD60R1K0CEAUMA1
製造商:
Infineon Technologies
描述:
MOSFET CONSUMER
生命週期:
製造商新產品
數據表:
IPD60R1K0CEAUMA1 數據表
交貨:
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ECAD Model:
更多信息:
IPD60R1K0CEAUMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PG-TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
6.8 A
Rds On - 漏源電阻：
1 Ohms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
13 nC
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
Pd - 功耗：
61 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
高度：
2.3 mm
長度：
6.5 mm
系列：
CoolMOS CE
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
英飛凌科技
秋季時間：
13 ns
濕氣敏感：
是的
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
60 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
IPD60R1K0CE SP001396896
單位重量：
0.139332 oz
Tags
IPD60R1K0, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
On a Reel of 2500, N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Infineon IPD60R1K0CEAUMA1
***ineon SCT
Single N-Channel 600 V 860 mOhm 13 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 600V, 6.8A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD60R1K0CEAUMA1
***nsix Microsemi
Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ure Electronics
Single N-Channel 600 V 500 Ohm 0.65 nC SIPMOS® Small Signal Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 600V, 0.021A, 0.5W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSS127H6327XTSA2
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 21 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPN60R2K1CEATMA1
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***nell
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.89ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel
***nell
MOSFET, N-CH, 600V, 2.6A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***icroelectronics
N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package
***ure Electronics
N-Channel 600 V 15 Ohm 4.9 nC Surface Mount SuperMESH Power MosFet- SOT-223
***ical
Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R
***ment14 APAC
Transistor, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:600V; On Resistance Rds(on):15ohm;
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 15 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
***nell
TRANSISTOR, MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 300mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Silicon SMT Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7
***nell
MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package
***ure Electronics
N-Channel 600 V 15 Ohm SMT SuperMESH Power Mosfet - SOIC-8
***nell
MOSFET, N-CH, 600V, 0.25A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 250mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
型號 製造商 描述 庫存 價格
IPD60R1K0CEAUMA1
DISTI # V72:2272_13982023		Infineon Technologies AGTrans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2585
  • 1000:$0.2627
  • 500:$0.3303
  • 250:$0.3337
  • 100:$0.3372
  • 25:$0.5253
  • 10:$0.5838
  • 1:$0.7064
IPD60R1K0CEAUMA1
DISTI # IPD60R1K0CEAUMA1-ND		Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.2655
IPD60R1K0CEAUMA1
DISTI # 32133351		Infineon Technologies AGTrans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2585
  • 29:$0.7064
IPD60R1K0CEAUMA1
DISTI # 33655369		Infineon Technologies AGTrans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.2184
IPD60R1K0CEAUMA1
DISTI # IPD60R1K0CEAUMA1		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R1K0CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2209
  • 15000:$0.2249
  • 10000:$0.2329
  • 5000:$0.2419
  • 2500:$0.2509
IPD60R1K0CEAUMA1
DISTI # SP001396896		Infineon Technologies AGCONSUMER (Alt: SP001396896)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.2069
  • 15000:€0.2229
  • 10000:€0.2419
  • 5000:€0.2639
  • 2500:€0.3219
IPD60R1K0CEAUMA1
DISTI # 34AC1675		Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2452
  • 1000:$0.2830
  • 500:$0.3060
  • 250:$0.3290
  • 100:$0.3520
  • 50:$0.4170
  • 25:$0.4820
  • 10:$0.5460
  • 1:$0.6570
IPD60R1K0CEAUMA1
DISTI # 726-IPD60R1K0CEAUMA1		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		14307
  • 1:$0.6500
  • 10:$0.5410
  • 100:$0.3490
  • 1000:$0.2800
IPD60R1K0CEAUMA1
DISTI # 1300898P		Infineon Technologies AGMOSFET N-CH 600V 6.8A COOLMOS CE TO-252, RL1800
  • 125:£0.1860
IPD60R1K0CEAUMA1
DISTI # 2781166		Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, TO-252
RoHS: Compliant		2452
  • 5000:$0.3520
  • 1000:$0.3710
  • 500:$0.3930
  • 250:$0.4540
  • 100:$0.5380
  • 25:$0.6590
  • 5:$0.7560
IPD60R1K0CEAUMA1
DISTI # 2781166		Infineon Technologies AGMOSFET, N-CH, 600V, 6.8A, TO-2522452
  • 500:£0.2310
  • 250:£0.2490
  • 100:£0.2660
  • 10:£0.4570
  • 1:£0.5680
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 Fixed Terminal Blocks PT 1.5/2-5.0-H
ESR03EZPJ103

Mfr.#: ESR03EZPJ103

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 Conn Terminal Block 2 POS 5mm Solder ST Thru-Hole 16A
可用性
庫存:
14
訂購:
1997
輸入數量:
IPD60R1K0CEAUMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.65
US$0.65
10
US$0.54
US$5.41
100
US$0.35
US$34.90
1000
US$0.28
US$280.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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