IPW60R055CFD7XKSA1

IPW60R055CFD7XKSA1
Mfr. #:
IPW60R055CFD7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPW60R055CFD7XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R055CFD7XKSA1 Datasheet
ECAD Model:
更多信息:
IPW60R055CFD7XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
38 A
Rds On - 漏源電阻:
55 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
79 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
178 W
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
CoolMOS CFD7
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
秋季時間:
5 ns
產品類別:
MOSFET
上升時間:
27 ns
出廠包裝數量:
240
子類別:
MOSFET
典型關斷延遲時間:
98 ns
典型的開啟延遲時間:
26 ns
第 # 部分別名:
IPW60R055CFD7 SP001686062
Tags
IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube
***ronik
N-CH 600V 153A 55mOhm TO-247-3
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 38A, 150Deg C, 178W; Transistor Polarity:n Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 38A, 150DEG C, 178W; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:178W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 38A, 150° C, 178W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:38A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.046ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:178W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
型號 製造商 描述 庫存 價格
IPW60R055CFD7XKSA1
DISTI # V36:1790_19082808
Infineon Technologies AG600V CoolMOS CFD7 Power Transistor0
    IPW60R055CFD7XKSA1
    DISTI # IPW60R055CFD7XKSA1-ND
    Infineon Technologies AGHIGH POWER_NEW
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 720:$7.2965
    • 240:$8.5672
    • 10:$10.2620
    • 1:$11.3200
    IPW60R055CFD7XKSA1
    DISTI # SP001686062
    Infineon Technologies AGTrans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube (Alt: SP001686062)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 240
    • 1:€5.7900
    • 10:€5.2900
    • 25:€5.0900
    • 50:€4.8900
    • 100:€4.6900
    • 500:€4.4900
    • 1000:€4.1900
    IPW60R055CFD7XKSA1
    DISTI # IPW60R055CFD7XKSA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R055CFD7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 240:$5.4900
    • 480:$5.2900
    • 960:$5.0900
    • 1440:$4.8900
    • 2400:$4.7900
    IPW60R055CFD7XKSA1
    DISTI # 71AC0408
    Infineon Technologies AGMOSFET, 600V, 38A, 150DEG C, 178W,Transistor Polarity:N Channel,Continuous Drain Current Id:38A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$5.9600
    • 250:$6.5400
    • 100:$6.8500
    • 50:$7.3700
    • 25:$7.8900
    • 10:$8.2700
    • 1:$9.1500
    IPW60R055CFD7XKSA1
    DISTI # 726-IPW60R055CFD7XKS
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    0
    • 1:$9.1500
    • 10:$8.2700
    • 25:$7.8900
    • 100:$6.8500
    • 250:$6.5400
    • 500:$5.9600
    IPW60R055CFD7XKSA1
    DISTI # 2916150
    Infineon Technologies AGMOSFET, 600V, 38A, 150DEG C, 178W
    RoHS: Compliant
    233
    • 100:£5.4300
    • 50:£5.8400
    • 10:£6.2600
    • 5:£7.2600
    • 1:£7.8400
    IPW60R055CFD7XKSA1
    DISTI # 2916150
    Infineon Technologies AGMOSFET, 600V, 38A, 150DEG C, 178W
    RoHS: Compliant
    233
    • 250:$8.2100
    • 100:$8.6300
    • 50:$9.1000
    • 10:$9.6300
    • 5:$10.8800
    • 1:$11.6400
    IPW60R055CFD7XKSA1
    DISTI # XSKDRABV0030590
    Infineon Technologies AG 
    RoHS: Compliant
    720 in Stock0 on Order
    • 720:$8.0160
    • 240:$8.5920
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    DRV5032FCDBZR

    Mfr.#: DRV5032FCDBZR

    OMO.#: OMO-DRV5032FCDBZR-TEXAS-INSTRUMENTS

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    OMO.#: OMO-HHM2293A1-TDK

    MULTILAYER DIVIDER FOR W-LAN/Bluetooth, 2.4-2.5GHz
    可用性
    庫存:
    Available
    訂購:
    2000
    輸入數量:
    IPW60R055CFD7XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$9.15
    US$9.15
    10
    US$8.27
    US$82.70
    25
    US$7.89
    US$197.25
    100
    US$6.85
    US$685.00
    250
    US$6.54
    US$1 635.00
    500
    US$5.96
    US$2 980.00
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