BSC010N04LSTATMA1

BSC010N04LSTATMA1
Mfr. #:
BSC010N04LSTATMA1
製造商:
Infineon Technologies
描述:
MOSFET DIFFERENTIATED MOSFETS
生命週期:
製造商新產品
數據表:
BSC010N04LSTATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
BSC010N04LSTATMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PG-TDSON-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
40 V
Id - 連續漏極電流:
100 A
Rds On - 漏源電阻:
1 Ohms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
133 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
139 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
正向跨導 - 最小值:
140 S
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
12 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
46 ns
典型的開啟延遲時間:
10 ns
第 # 部分別名:
BSC010N04LST SP001657068
Tags
BSC010N0, BSC010, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R
***ical
Trans MOSFET N-CH 40V 39A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 40 V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 40 V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00085ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
型號 製造商 描述 庫存 價格
BSC010N04LSTATMA1
DISTI # V72:2272_19084601
Infineon Technologies AGBSC010N04LST4593
  • 75000:$1.1034
  • 30000:$1.1374
  • 15000:$1.1714
  • 6000:$1.2055
  • 3000:$1.2395
  • 1000:$1.2735
  • 500:$1.3075
  • 250:$1.5192
  • 100:$1.5634
  • 50:$1.9948
  • 25:$2.0153
  • 10:$2.0357
  • 1:$2.6614
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4989In Stock
  • 1000:$1.3028
  • 500:$1.5724
  • 100:$1.9138
  • 10:$2.3810
  • 1:$2.6500
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4989In Stock
  • 1000:$1.3028
  • 500:$1.5724
  • 100:$1.9138
  • 10:$2.3810
  • 1:$2.6500
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.1340
BSC010N04LSTATMA1
DISTI # 29531925
Infineon Technologies AGBSC010N04LST4593
  • 6000:$1.2055
  • 3000:$1.2395
  • 1000:$1.2735
  • 500:$1.3075
  • 250:$1.5192
  • 100:$1.5634
  • 50:$1.9948
  • 25:$2.0153
  • 10:$2.0357
  • 7:$2.6614
BSC010N04LSTATMA1
DISTI # BSC010N04LSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 40V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC010N04LSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$1.0549
  • 30000:$1.0739
  • 20000:$1.1119
  • 10000:$1.1529
  • 5000:$1.1969
BSC010N04LSTATMA1
DISTI # SP001657068
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON T/R (Alt: SP001657068)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€1.0539
  • 30000:€1.0959
  • 20000:€1.1309
  • 10000:€1.2189
  • 5000:€1.5689
BSC010N04LSTATMA1
DISTI # 93AC6979
Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes5000
  • 1000:$1.2100
  • 500:$1.4600
  • 250:$1.5700
  • 100:$1.6800
  • 50:$1.8100
  • 25:$1.9500
  • 10:$2.0900
  • 1:$2.4600
BSC010N04LSTATMA1
DISTI # 726-BSC010N04LSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
4960
  • 1:$2.4400
  • 10:$2.0700
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2000
BSC010N04LSTATMA1
DISTI # 2986390
Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON5000
  • 500:£1.0500
  • 250:£1.1300
  • 100:£1.2100
  • 10:£1.5000
  • 1:£1.9900
BSC010N04LSTATMA1
DISTI # 2986390
Infineon Technologies AGMOSFET, N-CH, 40 V, 100A, 167W, TDSON
RoHS: Compliant
5000
  • 1000:$1.7000
  • 500:$1.7500
  • 250:$1.9400
  • 100:$2.0700
  • 10:$2.5300
  • 1:$3.3000
圖片 型號 描述
BSC027N04LSGATMA1

Mfr.#: BSC027N04LSGATMA1

OMO.#: OMO-BSC027N04LSGATMA1

MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC022N04LSATMA1

Mfr.#: BSC022N04LSATMA1

OMO.#: OMO-BSC022N04LSATMA1

MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
SIR826ADP-T1-GE3

Mfr.#: SIR826ADP-T1-GE3

OMO.#: OMO-SIR826ADP-T1-GE3

MOSFET 80V Vds 20V Vgs PowerPAK SO-8
LT8642SIV#PBF

Mfr.#: LT8642SIV#PBF

OMO.#: OMO-LT8642SIV-PBF

Switching Voltage Regulators 18V, 10A Synchronous Step-Down Silent Switcher 2 with 2.5 A Quiescent Current
MAX17505SATP+

Mfr.#: MAX17505SATP+

OMO.#: OMO-MAX17505SATP-

Switching Voltage Regulators 1.7A, 60V Synchronous Buck Regulator and minimal ON time
CMI-9653S-SMT-TR

Mfr.#: CMI-9653S-SMT-TR

OMO.#: OMO-CMI-9653S-SMT-TR

Audio Indicators & Alerts Buzzer 9.6mm sq 2.7kHz 3V SMT
CMI-9653S-SMT-TR

Mfr.#: CMI-9653S-SMT-TR

OMO.#: OMO-CMI-9653S-SMT-TR-CUI

AUDIO MAGNETIC IND 2-5V SMD
SIR826ADP-T1-GE3

Mfr.#: SIR826ADP-T1-GE3

OMO.#: OMO-SIR826ADP-T1-GE3-VISHAY

MOSFET N-CH 80V 60A PPAK SO-8
BSC027N04LSGATMA1

Mfr.#: BSC027N04LSGATMA1

OMO.#: OMO-BSC027N04LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 100A TDSON-8
BSC022N04LSATMA1

Mfr.#: BSC022N04LSATMA1

OMO.#: OMO-BSC022N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
可用性
庫存:
Available
訂購:
1987
輸入數量:
BSC010N04LSTATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.44
US$2.44
10
US$2.07
US$20.70
100
US$1.66
US$166.00
500
US$1.45
US$725.00
1000
US$1.20
US$1 200.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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