IPB50R250CPATMA1

Mfr. #:: IPB50R250CPATMA1
製造商:: Infineon Technologies
描述:: MOSFET LOW POWER_LEGACY
生命週期:: 製造商新產品
數據表:: IPB50R250CPATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-3

通道數：: 1 Channel

晶體管極性：: N通道

配置：: 單身的

商品名：: 酷摩

打包：: 捲軸

高度：: 4.4 mm

長度：: 10 mm

晶體管類型：: 1 N-Channel

寬度：: 9.25 mm

品牌：: 英飛凌科技

產品類別：: MOSFET

子類別：: MOSFET

第 # 部分別名：: IPB50R250CPATMA1 SP000236093

單位重量：: 0.139332 oz

Tags: IPB50R25, IPB50R2, IPB50R, IPB50, IPB5, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB50R250CPATMA1 描述

***ical: Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:550V; Current, Id Cont:13A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride

Market price

型號	製造商	描述	庫存	價格
IPB50R250CPATMA1 DISTI # V72:2272_06378629	Infineon Technologies AG	Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1491	75000:$1.1540 30000:$1.2511 15000:$1.3902 6000:$1.3989 3000:$1.4120 1000:$1.4190 500:$1.4510 250:$1.6197 100:$1.7965 50:$1.9153 25:$2.2269 10:$2.3177 1:$2.8802
IPB50R250CPATMA1 DISTI # IPB50R250CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 550V 13A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB50R250CPATMA1 DISTI # 26195036	Infineon Technologies AG	Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1491	6:$2.8802
IPB50R250CPATMA1 DISTI # IPB50R250CPATMA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 13A 3-Pin TO-263 T/R - Bulk (Alt: IPB50R250CPATMA1) Min Qty: 317 Container: Bulk	Americas - 0	3170:$1.0029 1585:$1.0209 951:$1.0569 634:$1.0969 317:$1.1379
IPB50R250CP DISTI # 726-IPB50R250CP	Infineon Technologies AG	MOSFET N-Ch 550V 13A D2PAK-2 CoolMOS CP RoHS: Compliant	784	1:$2.5300 10:$2.1500 100:$1.7200 500:$1.5100 1000:$1.2500
IPB50R250CPATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPB50R250CPATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2000	1000:$1.0400 500:$1.0900 100:$1.1400 25:$1.1900 1:$1.2800

相關產品

圖片	型號	描述
	Mfr.#: IPB50R250CPATMA1 OMO.#: OMO-IPB50R250CPATMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPB50R250CP OMO.#: OMO-IPB50R250CP-1190	- Bulk (Alt: IPB50R250CP)
	Mfr.#: IPB50R250CP 5R250P OMO.#: OMO-IPB50R250CP-5R250P-1190	全新原裝
	Mfr.#: IPB50R250CPATMA1 OMO.#: OMO-IPB50R250CPATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 550V 13A TO-263