STP30NM60N

Mfr. #:: STP30NM60N
製造商:: STMicroelectronics
描述:: MOSFET N-channel 600V, 25A Power II Mdmesh
生命週期:: 製造商新產品
數據表:: STP30NM60N 數據表
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更多信息:: STP30NM60N 更多信息 STP30NM60N Product Details

產品屬性
屬性值

製造商：: 意法半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 25 A

Rds On - 漏源電阻：: 130 mOhms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 190 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 9.15 mm

長度：: 10.4 mm

系列：: STB30NM60N

晶體管類型：: 1 N-Channel

寬度：: 4.6 mm

品牌：: 意法半導體

秋季時間：: 70 ns

產品類別：: MOSFET

上升時間：: 24 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 125 ns

典型的開啟延遲時間：: 20 ns

單位重量：: 0.011640 oz

Tags: STP30NM6, STP30NM, STP30N, STP30, STP3, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP30NM60N 描述

***ical: Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-220 Tube

***i-Key: MOSFET N-CH 600V 25A TO-220

***ark: MOSFET N CH 600V 25A TO-220; Transistor Polarity:N Channel; On State Resistance:100mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; Case Style:TO-220; Cont Current Id:12.5A; Termination Type:Through ;RoHS Compliant: Yes

***nell: MOSFET N CH 600V 25A TO-220; Transistor Polarity:N Channel; On State Resistance:100mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; Case Style:TO-220; Cont Current Id:12.5A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:600V; Typ Voltage Vgs th:3V; Voltage Vgs Rds on Measurement:10V

***ment14 APAC: MOSFET, N CH, 600V, 25A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-220; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存
STP30NM60N DISTI # 497-8447-5-ND	STMicroelectronics	MOSFET N-CH 600V 25A TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
STP30NM60ND DISTI # 497-8448-5-ND	STMicroelectronics	MOSFET N-CH 600V 25A TO-220 RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
STP30NM60N DISTI # 511-STP30NM60N	STMicroelectronics	MOSFET N-channel 600V, 25A Power II Mdmesh RoHS: Compliant	0
STP30NM60ND DISTI # 511-STP30NM60ND	STMicroelectronics	MOSFET N-channel 600V, 25A FDMesh II RoHS: Compliant	0

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