NGTB20N120LWG

Mfr. #:: NGTB20N120LWG
製造商:: ON Semiconductor
描述:: IGBT Transistors 1200V/20A IGBT FSI TO-247
生命週期:: 製造商新產品
數據表:: NGTB20N120LWG 數據表
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HTML Datasheet:: NGTB20N120LWG Datasheet NGTB20N120LWG Datasheet (P4-P6)NGTB20N120LWG Datasheet (P7-P9)
ECAD Model:

產品屬性
屬性值

製造商: 安森美半導體

產品分類: IGBT - 單

系列: NGTB20N120L

打包: 管子

單位重量: 0.229281 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247

最大功率: 192W

反向恢復時間trr: -

電流收集器 Ic-Max: 40A

電壓收集器發射極擊穿最大值: 1200V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 200A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 20A

開關能源: 3.1mJ (on), 700μJ (off)

柵極電荷: 200nC

Td-on-off-25°C: 86ns/235ns

測試條件: 600V, 20A, 10 Ohm, 15V

鈀功耗: 77 W

集電極-發射極-電壓-VCEO-Max: 1200 V

集電極-發射極-飽和-電壓: 2.2 V

25-C 時的連續集電極電流: 40 A

柵極-發射極-漏電流: 100 nA

最大柵極發射極電壓: 20 V

Tags: NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB20N120LWG 描述

***ical: Trans IGBT Chip N=-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: ON SEMICONDUCTOR - NGTB20N120LWG - IGBT, 1200V, 20A, FS1, TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Ch 1200V 40A FS 1.8V TO247

***nell: IGBT, 1200V, 20A, FS1, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AD Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - Leaded 390pF 100volts C0G LS=5mm +/-5%

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IRG8P25N120 - DISCRETE IGBT WITH

***ark: G8, 1200V, 25A, COPAK-247AD, TUBE

***ical: Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF

***ment14 APAC: IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W

***ineon SCT: Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1200V 30A 229000mW 3-Pin(3+Tab) TO-247 Tube

***-Wing Technology: ON SEMICONDUCTOR - NGTB15N120LWG - IGBT, 1200V, 15A, FS1, TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Ch 1200V 30A FS 1.8V TO247

***S: French Electronic Distributor since 1988

***nell: IGBT, 1200V, 15A, FS1, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ark: Igbt, Single, 1.2Kv, 40A, To-247Ac-3

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IGBT WITH ULTRAFAST SOFT RECOVER

***el Electronic: CAP CER 47PF 100V 5% NP0 RADIAL

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247AC-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No.

***ical: Trans IGBT Chip N-CH 1350V 40A 350000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1350V 20A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel

*** Source Electronics: IGBT with Monolithic Free Wheeling Diode

***i-Key: IGBT TRENCH/FS 1350V 40A TO247

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: TRANSISTOR, IGBT, 2.2V, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 394W; Collector Emitter Voltage V(br)ceo: 1.35kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C

***ark: Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1200V, 25A, TO247; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

Market price

型號	製造商	描述	庫存	價格
NGTB20N120LWG DISTI # NGTB20N120LWGOS-ND	ON Semiconductor	IGBT 1200V 40A 192W TO247-3 RoHS: Compliant Min Qty: 150 Container: Tube	Limited Supply - Call
NGTB20N120LWG DISTI # 70341216	ON Semiconductor	IGBT N-Ch 1200V 40A FS 1.8V TO247 RoHS: Compliant	0	10:$3.1900 100:$3.0300 250:$2.8800 500:$2.7400
NGTB20N120LWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	555	1000:$1.7500 500:$1.8400 100:$1.9200 25:$2.0000 1:$2.1500

相關產品

圖片	型號	描述
	Mfr.#: NGTB20N60L2TF1G OMO.#: OMO-NGTB20N60L2TF1G	IGBT Transistors 600V 20A IGBT TO-3PF
	Mfr.#: NGTB20N120LWG OMO.#: OMO-NGTB20N120LWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A IGBT FSI TO-247
	Mfr.#: NGTB20N120IHLWG OMO.#: OMO-NGTB20N120IHLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A IGBT FSI TO-247
	Mfr.#: NGTB20N120IHRWG OMO.#: OMO-NGTB20N120IHRWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/20A RC IGBT FSII
	Mfr.#: NGTB20H135IHRWG OMO.#: OMO-NGTB20H135IHRWG-1190	全新原裝
	Mfr.#: NGTB20N120 OMO.#: OMO-NGTB20N120-1190	全新原裝
	Mfr.#: NGTB20N120IH OMO.#: OMO-NGTB20N120IH-1190	全新原裝
	Mfr.#: NGTB20N120IHL OMO.#: OMO-NGTB20N120IHL-1190	全新原裝
	Mfr.#: NGTB20N120IHR OMO.#: OMO-NGTB20N120IHR-1190	全新原裝
	Mfr.#: NGTB20N120L OMO.#: OMO-NGTB20N120L-1190	全新原裝

可用性

庫存:: Available
訂購:: 5000
輸入數量:

NGTB20N120LWG的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$2.62~~; ~~US$2.62~~

10: ~~US$2.49~~; ~~US$24.94~~

100: ~~US$2.36~~; ~~US$236.25~~

500: ~~US$2.23~~; ~~US$1 115.65~~

1000: ~~US$2.10~~; ~~US$2 100.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

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NGTB20N120LWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes