CSD25213W10

Mfr. #:: CSD25213W10
描述:: MOSFET P-CH 20V 1.6A 4DSBGA
生命週期:: 製造商新產品
數據表:: CSD25213W10 數據表
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更多信息:: CSD25213W10 更多信息 CSD25213W10 Product Details

產品屬性
屬性值

製造商: 德州儀器

產品分類: 晶體管 - FET、MOSFET - 單

系列: CSD25213W10

打包: 捲軸

安裝方式: 貼片/貼片

商品名: 場效應管

包裝盒: DSBGA-4

技術: 矽

通道數: 1 Channel

配置: 單通道

晶體管型: 1 P-Channel

鈀功耗: 1 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 970 ns

上升時間: 520 ns

VGS-柵極-源極-電壓: - 6 V

Id 連續漏極電流: - 1.6 A

Vds-漏-源-擊穿電壓: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 850 mV

Rds-On-Drain-Source-Resistance: 47 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 1 us

典型開啟延遲時間: 510 ns

Qg-門電荷: 2.2 nC

通道模式: 增強

Tags: CSD252, CSD25, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD25213W10 描述

***as Instruments: -20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm 4-DSBGA -55 to 150

***p One Stop Global: Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R

***i-Key: MOSFET P-CH 20V 1.6A 4DSBGA

***ark: 20V Pch Mosfet

CSD25213W10 更多信息

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD25213W10 DISTI # 296-40004-1-ND	MOSFET P-CH 20V 1.6A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5685In Stock	1000:$0.1570 500:$0.2094 100:$0.3053 10:$0.4450 1:$0.5700
CSD25213W10 DISTI # 296-40004-6-ND	MOSFET P-CH 20V 1.6A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5685In Stock	1000:$0.1570 500:$0.2094 100:$0.3053 10:$0.4450 1:$0.5700
CSD25213W10 DISTI # 296-40004-2-ND	MOSFET P-CH 20V 1.6A 4DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1228 6000:$0.1313 3000:$0.1398
CSD25213W10 DISTI # CSD25213W10	Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD25213W10) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.1109 12000:$0.1059 18000:$0.1019 30000:$0.0989 60000:$0.0959
CSD25213W10 DISTI # CSD25213W10	Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD25213W10 DISTI # CSD25213W10	Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1779 6000:€0.1359 12000:€0.1219 18000:€0.1009 30000:€0.0929
CSD25213W10	P-Channel NexFET&#153,Power MOSFET	6000	1000:$0.0900 750:$0.1000 500:$0.1200 250:$0.1500 100:$0.1600 25:$0.1900 10:$0.2100 1:$0.2300
CSD25213W10 DISTI # 595-CSD25213W10	MOSFET P-CH NexFET Pwr MOSFET RoHS: Compliant	10655	1:$0.4500 10:$0.3400 100:$0.1850 1000:$0.1390 3000:$0.1200

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