IRF6725MTR1PBF

IRF6725MTR1PBF
Mfr. #:
IRF6725MTR1PBF
製造商:
Infineon / IR
描述:
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
生命週期:
製造商新產品
數據表:
IRF6725MTR1PBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6725MTR1PBF DatasheetIRF6725MTR1PBF Datasheet (P4-P6)IRF6725MTR1PBF Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
DirectFET-MX
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
170 A
Rds On - 漏源電阻:
3.2 mOhms
Vgs th - 柵源閾值電壓:
2.35 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
36 nC
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
Pd - 功耗:
100 W
配置:
單身的
頻道模式:
增強
打包:
捲軸
高度:
0.7 mm
長度:
6.35 mm
晶體管類型:
1 N-Channel
類型:
DirectFET 功率 MOSFET
寬度:
5.05 mm
品牌:
英飛凌/紅外
正向跨導 - 最小值:
150 S
秋季時間:
13 ns
產品類別:
MOSFET
上升時間:
22 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
19 ns
典型的開啟延遲時間:
16 ns
第 # 部分別名:
SP001530850
單位重量:
0.017637 oz
Tags
IRF6725M, IRF6725, IRF672, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 170A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.7 mOhm, ID 28A, DirectFET
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:220A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
*** Source Electronics
MOSFET N-CH 30V 32A DIRECTFET / Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MX T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):1.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
***(Formerly Allied Electronics)
A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31
***ark
N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)
***et Europe
Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
***ment14 APAC
MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
***ical
Trans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:39A; On Resistance, Rds(on):1.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:MX ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, DIRECTFET, 25V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6716; Current Id Max:39A; Package / Case:MX; Power Dissipation Pd:3.6mW; Pulse Current Idm:320A; SMD Marking:3.6; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
型號 製造商 描述 庫存 價格
IRF6725MTR1PBF
DISTI # IRF6725MTR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 28A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6725MTR1PBF
    DISTI # IRF6725MTR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 30V 28A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6725MTR1PBF
      DISTI # IRF6725MTR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 30V 28A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6725MTR1PBF
        DISTI # 70018865
        Infineon Technologies AGMOSFET,N-Ch,VDSS 30V,RDS(ON) 1.7 mOhm,ID 28A,DirectFET
        RoHS: Compliant
        0
        • 1000:$1.7500
        • 2000:$1.5900
        IRF6725MTR1PBF
        DISTI # 942-IRF6725MTR1PBF
        Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET DIRECTFET MX
        RoHS: Compliant
        390
        • 1:$2.9800
        • 10:$1.5800
        • 100:$1.4000
        • 500:$1.3100
        • 1000:$1.2500
        • 2000:$1.2100
        • 5000:$1.1500
        IRF6725MTR1PBFInternational Rectifier 
        RoHS: Compliant
        Europe - 495
          IRF6725MTR1PBF
          DISTI # IRF6725MTR1PBF
          Infineon Technologies AGN-Ch 30V 170A 100W 0,0022R MX
          RoHS: Compliant
          10
          • 10:€1.1000
          • 50:€0.9010
          • 200:€0.8010
          • 500:€0.7745
          IRF6725MTR1PBF
          DISTI # 1602264
          Infineon Technologies AGMOSFET, N, DIRECTFET MX
          RoHS: Compliant
          0
          • 1:$4.7200
          • 10:$2.5000
          • 100:$2.2200
          • 500:$2.0700
          • 1000:$1.9800
          • 2000:$1.9400
          圖片 型號 描述
          IRF6725MTRPBF

          Mfr.#: IRF6725MTRPBF

          OMO.#: OMO-IRF6725MTRPBF

          MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
          IRF6725MTR1PBF

          Mfr.#: IRF6725MTR1PBF

          OMO.#: OMO-IRF6725MTR1PBF

          MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
          IRF6725MTR1PBF.

          Mfr.#: IRF6725MTR1PBF.

          OMO.#: OMO-IRF6725MTR1PBF--1190

          全新原裝
          IRF6725NTRPBF

          Mfr.#: IRF6725NTRPBF

          OMO.#: OMO-IRF6725NTRPBF-1190

          全新原裝
          IRF6725MTR1PBF

          Mfr.#: IRF6725MTR1PBF

          OMO.#: OMO-IRF6725MTR1PBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
          IRF6725MTRPBF

          Mfr.#: IRF6725MTRPBF

          OMO.#: OMO-IRF6725MTRPBF-INFINEON-TECHNOLOGIES

          RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
          可用性
          庫存:
          390
          訂購:
          2373
          輸入數量:
          IRF6725MTR1PBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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