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IPD65R660CFD

IPD65R660CFD
Mfr. #:
IPD65R660CFD
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
生命週期:
製造商新產品
數據表:
IPD65R660CFD 數據表
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ECAD Model:
更多信息:
IPD65R660CFD 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
6 A
Rds On - 漏源電阻：
660 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
22 nC
Pd - 功耗：
63 W
配置：
單身的
商品名：
酷摩
打包：
捲軸
高度：
2.3 mm
長度：
6.5 mm
系列：
CoolMOS CFD2
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
英飛凌科技
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
2500
子類別：
MOSFET
第 # 部分別名：
IPD65R660CFDBTMA1 IPD65R66CFDXT SP000745024
單位重量：
0.139332 oz
Tags
IPD65R66, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPD65R660CFDAATMA1
DISTI # V72:2272_06383438		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 1000:$0.9281
  • 500:$1.0445
  • 250:$1.1414
  • 100:$1.2163
  • 25:$1.3913
  • 10:$1.4280
  • 1:$1.5952
IPD65R660CFDBTMA1
DISTI # IPD65R660CFDBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6985
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6985
IPD65R660CFDAATMA1
DISTI # IPD65R660CFDAATMA1-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8925
IPD65R660CFDAATMA1
DISTI # 31084167		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 1000:$0.9281
  • 500:$1.0445
  • 250:$1.1414
  • 100:$1.2163
  • 25:$1.3913
  • 10:$1.4280
  • 9:$1.5952
IPD65R660CFD
DISTI # IPD65R660CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: IPD65R660CFD)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 2500:$0.7614
  • 5000:$0.7301
  • 7500:$0.7203
  • 12500:$0.6922
  • 25000:$0.6833
  • 62500:$0.6663
  • 125000:$0.6500
IPD65R660CFD
DISTI # SP000745024		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP000745024)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.9999
  • 5000:€0.8389
  • 10000:€0.7009
  • 15000:€0.6109
  • 25000:€0.5719
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.6529
  • 5000:$0.6299
  • 10000:$0.6069
  • 15000:$0.5859
  • 25000:$0.5759
IPD65R660CFDATMA2
DISTI # IPD65R660CFDATMA2		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
    IPD65R660CFDATMA1
    DISTI # SP001117748    		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP001117748)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.9929
    • 5000:€0.7749
    • 10000:€0.6929
    • 15000:€0.6299
    • 25000:€0.5909
    IPD65R660CFDBTMA1
    DISTI # SP000745024    		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP000745024)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€1.0199
    • 5000:€0.8559
    • 10000:€0.7149
    • 15000:€0.6229
    • 25000:€0.5829
    IPD65R660CFDAATMA1
    DISTI # IPD65R660CFDA    		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R (Alt: IPD65R660CFDA)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Asia - 0
      IPD65R660CFDAATMA1
      DISTI # IPD65R660CFDAATMA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDAATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.8649
      • 5000:$0.8339
      • 10000:$0.8039
      • 15000:$0.7769
      • 25000:$0.7629
      IPD65R660CFDAATMA1
      DISTI # SP000928260      		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R (Alt: SP000928260)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.9999
      • 5000:€0.8339
      • 10000:€0.7689
      • 15000:€0.7139
      • 25000:€0.6669
      IPD65R660CFDATMA1
      DISTI # 34AC1688      		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes1878
      • 1:$1.4900
      • 10:$1.2700
      • 25:$1.1700
      • 50:$1.0700
      • 100:$0.9760
      • 250:$0.9190
      • 500:$0.8620
      • 1000:$0.6810
      IPD65R660CFDBTMA1
      DISTI # 13AC9050      		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes2138
      • 1:$1.5800
      • 10:$1.3500
      • 25:$1.2200
      • 50:$1.1100
      • 100:$0.9280
      • 250:$0.8210
      • 500:$0.7130
      • 1000:$0.6840
      IPD65R660CFDInfineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		276527
      • 1000:$0.5500
      • 500:$0.5800
      • 100:$0.6100
      • 25:$0.6300
      • 1:$0.6800
      IPD65R660CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		67500
      • 1000:$0.5500
      • 500:$0.5800
      • 100:$0.6100
      • 25:$0.6300
      • 1:$0.6800
      IPD65R660CFD
      DISTI # 726-IPD65R660CFD      		Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
      RoHS: Compliant      		615
      • 1:$1.4900
      • 10:$1.2700
      • 100:$0.9760
      • 500:$0.8620
      IPD65R660CFDATMA1
      DISTI # 726-PD65R660CFDATMA1      		Infineon Technologies AGMOSFET LOW POWER_LEGACY
      RoHS: Compliant      		470
      • 1:$1.4900
      • 10:$1.2700
      • 100:$0.9760
      • 500:$0.8620
      • 1000:$0.6810
      • 2500:$0.6040
      IPD65R660CFDATMA2
      DISTI # 726-IPD65R660CFDATMA      		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
      RoHS: Compliant      		0
      • 2500:$0.6040
      IPD65R660CFDA
      DISTI # 726-IPD65R660CFDA      		Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2
      RoHS: Compliant      		2500
      • 1:$1.7700
      • 10:$1.5100
      • 100:$1.2100
      • 500:$1.0600
      • 1000:$0.8720
      • 2500:$0.8120
      IPD65R660CFDBTMA1
      DISTI # N/A      		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
        IPD65R660CFDATMA1
        DISTI # 2784030        		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252
        RoHS: Compliant        		2003
        • 5:£1.3300
        • 25:£1.2000
        • 100:£0.9240
        IPD65R660CFDBTMA1
        DISTI # 2726057        		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3
        RoHS: Compliant        		2152
        • 5:£0.6890
        • 25:£0.6750
        • 100:£0.6610
        IPD65R660CFDATMA1
        DISTI # 2784030        		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252
        RoHS: Compliant        		1878
        • 5:$2.1800
        IPD65R660CFDBTMA1
        DISTI # 2726057        		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3
        RoHS: Compliant        		2138
        • 1:$2.1800
        • 10:$1.9000
        • 100:$1.5500
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        可用性
        庫存:
        540
        訂購:
        2523
        輸入數量:
        IPD65R660CFD的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$1.48
        US$1.48
        10
        US$1.26
        US$12.60
        100
        US$0.98
        US$97.50
        500
        US$0.86
        US$430.50
        1000
        US$0.68
        US$680.00
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