2N6661

Mfr. #: 2N6661
製造商: Microchip Technology
描述: MOSFET N-CH 90V 0.86A TO-205
生命週期: 製造商新產品
數據表: 2N6661 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2N6661 Overview

Product belongs to the - series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-205AD, TO-39-3 Metal Can Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-39 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 90V This product has an 50pF @ 24V value of 300pF @ 25V. This product's Standard. 350mA (Tj) continuous drain-ID current at 25°C; This product has an 4 Ohm @ 1A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 6.25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 1.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 90 V. The 4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.

2N6661 Image

2N6661

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N6661 Specifications
  • Manufacturer Microchip Technology
  • Product Category FETs - Single
  • Series -
  • Packaging Bulk
  • Mounting-Style Through Hole
  • Package-Case TO-205AD, TO-39-3 Metal Can
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-39
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 6.25W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 90V
  • Input-Capacitance-Ciss-Vds 50pF @ 24V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 350mA (Tj)
  • Rds-On-Max-Id-Vgs 4 Ohm @ 1A, 10V
  • Vgs-th-Max-Id 2V @ 1mA
  • Gate-Charge-Qg-Vgs -
  • Pd-Power-Dissipation 6.25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 1.5 A
  • Vds-Drain-Source-Breakdown-Voltage 90 V
  • Rds-On-Drain-Source-Resistance 4 Ohms
  • Transistor-Polarity N-Channel
  • Channel-Mode Enhancement

2N6661

2N6661 Specifications

2N6661 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is -.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Bulk.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-205AD, TO-39-3 Metal Can.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-39.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 90V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 50pF @ 24V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 350mA (Tj).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 4 Ohm @ 1A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 6.25 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 1.5 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 90 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 4 Ohms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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