| Mfr. #: | 2SD1047 |
|---|---|
| 製造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT IGBT & Power Bipola |
| 生命週期: | 製造商新產品 |
| 數據表: | 2SD1047 數據表 |


Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.238311 oz Through Hole Mounting-Style TO-3P-3, SC-65-3 Through Hole mounting type Supplier device package: TO-3P Transistor type: NPN Maximum current collector Ic is 12A . Maximum collector-emitter breakdown voltage of 140V DC current gain minimum (hFE) of Ic/Vce at 60 @ 1A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 700mV @ 700mA, 7A Power-off control: 100 W Rated VCEO up to 140 V The transistor polarity is NPN. 6 V rating of 5 V Gain-Bandwidth-Product: 20 MHz This product is capable of handling a 12 A continuous collector current. Minimum hfe for DC collector-base gain is 50.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SD1047 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed 500V Transistors
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.238311 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-3P-3, SC-65-3
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-3P
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 12A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 140V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 1A, 5V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 700mV @ 700mA, 7A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 100 W.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 140 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 6 V.
A: At what frequency does the Gain-Bandwidth-Product-fT?
Q: The product Gain-Bandwidth-Product-fT is 20 MHz.
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 12 A.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 50