BFU730F,115

BFU730F,115 Overview

This product is manufactured by NXP. The Transistor Type is Bipolar. The 205. The maximum 2.8 V. The product can operate at a maximum temperature of SMD/SMT. SOT343F-4 package/case type is utilized by this product. Reel packaging for easy dispensing Maximum DC Current Gain hFE: 555 The height of the product is 0.75 mm. 2.2 mm long This device belongs to the RF Silicon Germanium type. NXP Semiconductors is a trusted brand for quality electronics 197 mW RF Bipolar Transistors product type 3000 of 100 Transistors as subcategory This product is also known by the 934064614115 number of 934069005115. 1. 0.000235 oz of Unit Weight

BFU730F,115 Image

BFU730F,115 Specifications

• Manufacturer: NXP
• Product Category: RF Bipolar Transistors
• RoHS: Y
• Transistor Type: Bipolar
• Technology: SiGe
• DC Collector/Base Gain hfe Min: 205
• Collector- Emitter Voltage VCEO Max: 2.8 V
• Emitter- Base Voltage VEBO: 1 V
• Continuous Collector Current: 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT343F-4
• Packaging: Reel
• Collector- Base Voltage VCBO: 10 V
• DC Current Gain hFE Max: 555
• Height: 0.75 mm
• Length: 2.2 mm
• Operating Frequency: 55 GHz
• Type: RF Silicon Germanium
• Width: 1.35 mm
• Brand: NXP Semiconductors
• Pd - Power Dissipation: 197 mW
• Product Type: RF Bipolar Transistors
• Factory Pack Quantity: 3000
• Subcategory: Transistors
• Part # Aliases: 934064614115
• Unit Weight: 0.000235 oz

BFU730F,115 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: At what frequency does the Transistor Type?

  Q: The product Transistor Type is Bipolar.

• A: What is the DC Collector/Base Gain hfe Min of the product?

  Q: The DC Collector/Base Gain hfe Min of the product is 205.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 2.8 V

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is SMD/SMT.

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is SOT343F-4.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: Is the cutoff frequency of the product DC Current Gain hFE Max?

  Q: Yes, the product's DC Current Gain hFE Max is indeed 555

• A: What is the Height of the product?

  Q: The Height of the product is 0.75 mm.

• A: At what frequency does the Length?

  Q: The product Length is 2.2 mm.

• A: At what frequency does the Type?

  Q: The product Type is RF Silicon Germanium.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed NXP Semiconductors

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 197 mW.

• A: At what frequency does the Product Type?

  Q: The product Product Type is RF Bipolar Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 3000.

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is Transistors.

• A: At what frequency does the Part # Aliases?

  Q: The product Part # Aliases is 934064614115.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.000235 oz.