CSD16327Q3T

Mfr. #: CSD16327Q3T
製造商: Texas Instruments
描述: MOSFET 25V, N ch NexFET MOSFETG , single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150
生命週期: 製造商新產品
數據表: CSD16327Q3T 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16327Q3T Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-Clip-8 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 25 V 60 A continuous drain current Rds On value of 4.8 mOhms Gate-Source Threshold Voltage Range: 900 mV Gate-Source Voltage: 10 V, - 8 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 74 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 1 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 96 S 6.3 ns fall time MOSFET product type Rise Time is 15 ns. 250 of 100 MOSFETs as subcategory Turn-off delay time is 13 ns. The typical turn-on delay time is 5.3 ns. 1. 0.001570 oz of Unit Weight

CSD16327Q3T Image

CSD16327Q3T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16327Q3T Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-Clip-8
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 25 V
  • Id - Continuous Drain Current: 60 A
  • Rds On - Drain-Source Resistance: 4.8 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 900 mV
  • Vgs - Gate-Source Voltage: 10 V, - 8 V
  • Qg - Gate Charge: 8.4 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 74 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD16327Q3
  • Transistor Type: 1 N-Channel
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 96 S
  • Fall Time: 6.3 ns
  • Product Type: MOSFET
  • Rise Time: 15 ns
  • Factory Pack Quantity: 250
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 13 ns
  • Typical Turn-On Delay Time: 5.3 ns
  • Unit Weight: 0.001570 oz

CSD16327Q3T

CSD16327Q3T Specifications

CSD16327Q3T FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is VSON-Clip-8.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 25 V.

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 60 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 4.8 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 900 mV.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 10 V, - 8 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 74 W.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Height?

    Q: The product Height is 1 mm.

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 3.3 mm

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel

  • A: At what frequency does the Brand?

    Q: The product Brand is Texas Instruments.

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 96 S.

  • A: What is the Fall Time of the product?

    Q: The Fall Time of the product is 6.3 ns.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 15 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 250

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 13 ns

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 5.3 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.001570 oz.

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