PRF13750HR9

Mfr. #: PRF13750HR9
製造商: NXP Semiconductors
描述: RF MOSFET Transistors Pre- Production RF transistor 915MHz
生命週期: 製造商新產品
數據表: PRF13750HR9 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PRF13750HR9 Specifications
  • Manufacturer: NXP
  • Product Category: RF MOSFET Transistors
  • RoHS: Y
  • Transistor Polarity: N-Channel
  • Technology: Si
  • Id - Continuous Drain Current: 2.8 A
  • Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
  • Gain: 19.5 dB
  • Output Power: 750 W
  • Minimum Operating Temperature: - 40 C
  • Maximum Operating Temperature: + 150 C
  • Mounting Style: SMD/SMT
  • Package / Case: NI-1230H-4S-4
  • Operating Frequency: 0.7 GHz to 1.3 GHz
  • Series: MRF13750H
  • Type: RF Power MOSFET
  • Brand: NXP Semiconductors
  • Number of Channels: 2 Channel
  • Product Type: RF MOSFET Transistors
  • Subcategory: MOSFETs
  • Vgs - Gate-Source Voltage: - 6 V, 10 V
  • Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9

PRF13750HR9 Specifications

PRF13750HR9 FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is NXP.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 2.8 A.

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 105 V.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 19.5 dB.

  • A: What is the Output Power of the product?

    Q: The Output Power of the product is 750 W.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed NI-1230H-4S-4

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: At what frequency does the Brand?

    Q: The product Brand is NXP Semiconductors.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is RF MOSFET Transistors.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, 10 V

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 1.3 V.

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