STGFW30H65FB

STGFW30H65FB Overview

This product is manufactured by STMicroelectronics. TO-3PF package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 58 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 30 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 300 of 100 IGBTs as subcategory 1. 0.245577 oz of Unit Weight

STGFW30H65FB Image

STGFW30H65FB Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-3PF
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.55 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 60 A
• Pd - Power Dissipation: 58 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGFW30H65FB
• Packaging: Tube
• Continuous Collector Current Ic Max: 30 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 300
• Subcategory: IGBTs
• Unit Weight: 0.245577 oz

STGFW30H65FB FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed STMicroelectronics

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is TO-3PF.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed Through Hole

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.55 V.

• A: What is the Maximum Gate Emitter Voltage of the product?

  Q: The Maximum Gate Emitter Voltage of the product is 20 V.

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 60 A.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 58 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Continuous Collector Current Ic Max of the product?

  Q: The Continuous Collector Current Ic Max of the product is 30 A.

• A: At what frequency does the Brand?

  Q: The product Brand is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 300.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is IGBTs.

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.245577 oz.