CSD13202Q2

Mfr. #: CSD13202Q2
製造商: Texas Instruments
描述: MOSFET N-CH 12V 76A 6SON
生命週期: 製造商新產品
數據表: CSD13202Q2 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13202Q2 Overview

Product belongs to the CSD13202Q2 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. WSON-FET-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13.6 ns of 16 ns. This product has a 28 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 14.4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 9.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 4.5 ns. Qg-Gate-Charge is 5.1 nC. This product features a 44 S of 500 S for high performance. This product operates in Depletion channel mode for optimal performance.

CSD13202Q2 Image

CSD13202Q2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13202Q2 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD13202Q2
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case WSON-FET-6
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 2.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 13.6 ns
  • Rise-Time 28 ns
  • Vgs-Gate-Source-Voltage 8 V
  • Id-Continuous-Drain-Current 14.4 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 800 mV
  • Rds-On-Drain-Source-Resistance 9.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 4.5 ns
  • Qg-Gate-Charge 5.1 nC
  • Forward-Transconductance-Min 44 S
  • Channel-Mode Depletion

CSD13202Q2

CSD13202Q2 Specifications

CSD13202Q2 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD13202Q2.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is WSON-FET-6.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 2.7 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 13.6 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 28 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 8 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 14.4 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 12 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 800 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 9.3 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 4.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 5.1 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 44 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Depletion.

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1
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