| Mfr. #: | CSD13306WT |
|---|---|
| 製造商: | Texas Instruments |
| 描述: | MOSFET N-CH 12V 6DSBGA |
| 生命週期: | 製造商新產品 |
| 數據表: | CSD13306WT 數據表 |


Product belongs to the CSD13306W series. Reel is the packaging method for this product Weight of 0.000060 oz SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 1.9 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 3.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 700 mV Vgs-th gate-source threshold voltage for efficient power management. The 15.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 7 ns. Qg-Gate-Charge is 8.6 nC. This product features a 15 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13306WT Specifications
A: At what frequency does the Series?
Q: The product Series is CSD13306W.
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.000060 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is DSBGA-6.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1.9 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 8 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 11 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 10 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3.5 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 700 mV
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 15.5 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 20 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 7 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 8.6 nC
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 15 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement