CSD13381F4

Mfr. #: CSD13381F4
製造商: Texas Instruments
描述: MOSFET N-CH 12V 2.1A 3PICOSTAR
生命週期: 製造商新產品
數據表: CSD13381F4 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13381F4 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 12V This product has an 200pF @ 6V value of 300pF @ 25V. This product's Standard. 2.1A (Ta) continuous drain-ID current at 25°C; This product has an 180 mOhm @ 500mA, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.8 ns of 16 ns. This product has a 1.5 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 180 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 3.7 ns. Qg-Gate-Charge is 1.06 nC.

CSD13381F4 Image

CSD13381F4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13381F4 Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 3-XFDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 3-PICOSTAR
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 500mW
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 12V
  • Input-Capacitance-Ciss-Vds 200pF @ 6V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 2.1A (Ta)
  • Rds-On-Max-Id-Vgs 180 mOhm @ 500mA, 4.5V
  • Vgs-th-Max-Id 1.1V @ 250μA
  • Gate-Charge-Qg-Vgs 1.4nC @ 4.5V
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.8 ns
  • Rise-Time 1.5 ns
  • Vgs-Gate-Source-Voltage 8 V
  • Id-Continuous-Drain-Current 7 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 850 mV
  • Rds-On-Drain-Source-Resistance 180 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 3.7 ns
  • Qg-Gate-Charge 1.06 nC

CSD13381F4

CSD13381F4 Specifications

CSD13381F4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is NexFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 3-XFDFN.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 3-PICOSTAR.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 12V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 200pF @ 6V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 2.1A (Ta)

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 180 mOhm @ 500mA, 4.5V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 500 mW.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 3.8 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 1.5 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 8 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 7 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 12 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 850 mV.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 180 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 11 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 3.7 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 1.06 nC.

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