| Mfr. #: | CSD13383F4 |
|---|---|
| 製造商: | Texas Instruments |
| 描述: | MOSFET N-CH 12V 3PICOSTAR |
| 生命週期: | 製造商新產品 |
| 數據表: | CSD13383F4 數據表 |


Product belongs to the CSD13383F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. PicoStar-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 500 mW This product's 10 V. The ID of continuous drain current is 2.9 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. The 53 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 2 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13383F4 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed CSD13383F4
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Tradename?
Q: The product Tradename is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is PicoStar-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 2.9 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 12 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 53 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 2 nC.