| Mfr. #: | CSD13383F4T |
|---|---|
| 製造商: | Texas Instruments |
| 描述: | IGBT Transistors MOSFET 12V N-Channel FemtoFET MOSFET |
| 生命週期: | 製造商新產品 |
| 數據表: | CSD13383F4T 數據表 |
Product belongs to the CSD13383F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. SMD-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 315 ns of 16 ns. This product has a 123 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 2.9 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 44 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 96 ns This product has a 39 ns. Qg-Gate-Charge is 2 nC. This product features a 5.4 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD13383F4T Specifications
A: What is the Series of the product?
Q: The Series of the product is CSD13383F4.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed FemtoFET
A: At what frequency does the Package-Case?
Q: The product Package-Case is SMD-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 500 mW.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 315 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 123 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 10 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2.9 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 44 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 96 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 39 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 2 nC
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 5.4 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.