CSD16406

Mfr. #: CSD16406
製造商: Texas Instruments
描述:
生命週期: 製造商新產品
數據表: CSD16406 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16406 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (5x6) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1100pF @ 12.5V value of 300pF @ 25V. This product's Standard. 19A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 5.3 mOhm @ 20A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4.8 ns of 16 ns. This product has a 12.9 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 19 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.7 V Vgs-th gate-source threshold voltage for efficient power management. The 5.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 8.5 ns This product has a 7.3 ns. Qg-Gate-Charge is 5.8 nC. This product features a 53 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16406 Image

CSD16406

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16406 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (5x6)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 2.7W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 25V
  • Input-Capacitance-Ciss-Vds 1100pF @ 12.5V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 19A (Ta), 60A (Tc)
  • Rds-On-Max-Id-Vgs 5.3 mOhm @ 20A, 10V
  • Vgs-th-Max-Id 2.2V @ 250μA
  • Gate-Charge-Qg-Vgs 8.1nC @ 4.5V
  • Pd-Power-Dissipation 2.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.8 ns
  • Rise-Time 12.9 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 19 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.7 V
  • Rds-On-Drain-Source-Resistance 5.9 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 8.5 ns
  • Typical-Turn-On-Delay-Time 7.3 ns
  • Qg-Gate-Charge 5.8 nC
  • Forward-Transconductance-Min 53 S
  • Channel-Mode Enhancement

CSD16406

CSD16406 Specifications

CSD16406 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-PowerTDFN.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-VSON (5x6).

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 25V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1100pF @ 12.5V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 19A (Ta), 60A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 5.3 mOhm @ 20A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2.7 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 4.8 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 12.9 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 16 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 19 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.7 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 5.9 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 8.5 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 7.3 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 5.8 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 53 S

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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