CSD16409

Mfr. #: CSD16409
製造商: Texas Instruments
描述:
生命週期: 製造商新產品
數據表: CSD16409 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16409 Overview

Product belongs to the CSD16409Q3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-Clip-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 2.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.4 ns of 16 ns. This product has a 10.6 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 9.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6.3 ns This product has a 6.5 ns. Qg-Gate-Charge is 4 nC. This product features a 38 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16409 Image

CSD16409

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16409 Specifications
  • Manufacturer TI
  • Product Category IC Chips
  • Series CSD16409Q3
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-Clip-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 2.6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.4 ns
  • Rise-Time 10.6 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 15 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2 V
  • Rds-On-Drain-Source-Resistance 9.5 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 6.3 ns
  • Typical-Turn-On-Delay-Time 6.5 ns
  • Qg-Gate-Charge 4 nC
  • Forward-Transconductance-Min 38 S
  • Channel-Mode Enhancement

CSD16409

CSD16409 Specifications

CSD16409 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD16409Q3.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is VSON-Clip-8.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 2.6 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 3.4 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 10.6 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 15 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 9.5 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 6.3 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 6.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 4 nC

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 38 S

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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