CSD17552Q3A

Mfr. #: CSD17552Q3A
製造商: Texas Instruments
描述: MOSFET N-CH 30V 15A 8SON
生命週期: 製造商新產品
數據表: CSD17552Q3A 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD17552Q3A Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerVDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-SON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 2050pF @ 15V value of 300pF @ 25V. This product's Standard. 15A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 6 mOhm @ 11A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.4 ns of 16 ns. This product has a 7.4 nS of 16 ns. This product's 20 V. The ID of continuous drain current is 60 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.5 V Vgs-th gate-source threshold voltage for efficient power management. The 8.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 7.2 ns. Qg-Gate-Charge is 9 nC. This product features a 106 S of 500 S for high performance.

CSD17552Q3A Image

CSD17552Q3A

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17552Q3A Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerVDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-SON (3.3x3.3)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 2.6W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 2050pF @ 15V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 15A (Ta), 60A (Tc)
  • Rds-On-Max-Id-Vgs 6 mOhm @ 11A, 10V
  • Vgs-th-Max-Id 1.9V @ 250μA
  • Gate-Charge-Qg-Vgs 12nC @ 4.5V
  • Pd-Power-Dissipation 2.6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.4 ns
  • Rise-Time 7.4 nS
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 60 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.5 V
  • Rds-On-Drain-Source-Resistance 8.1 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 7.2 ns
  • Qg-Gate-Charge 9 nC
  • Forward-Transconductance-Min 106 S

CSD17552Q3A

CSD17552Q3A Specifications

CSD17552Q3A FAQ
  • A: At what frequency does the Series?

    Q: The product Series is NexFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-PowerVDFN.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-SON (3.3x3.3)

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 2050pF @ 15V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 15A (Ta), 60A (Tc)

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 6 mOhm @ 11A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2.6 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 3.4 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 7.4 nS.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 60 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.5 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.1 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 11 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 7.2 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 9 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 106 S.

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