CSD18503KCS

Mfr. #: CSD18503KCS
製造商: Texas Instruments
描述: MOSFET N-CH 40V 100A TO220-3
生命週期: 製造商新產品
數據表: CSD18503KCS 數據表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18503KCS Overview

Product belongs to the CSD18503KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 143 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.8 ns of 16 ns. This product has a 5.3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 130 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 6.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14 ns This product has a 5.7 ns. Qg-Gate-Charge is 30 nC. This product features a 98 S of 500 S for high performance.

CSD18503KCS Image

CSD18503KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18503KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18503KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 143 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.8 ns
  • Rise-Time 5.3 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 130 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 6.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 14 ns
  • Typical-Turn-On-Delay-Time 5.7 ns
  • Qg-Gate-Charge 30 nC
  • Forward-Transconductance-Min 98 S

CSD18503KCS

CSD18503KCS Specifications

CSD18503KCS FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD18503KCS

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.211644 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 143 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 6.8 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 5.3 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 130 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 40 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.9 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 6.8 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 14 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 5.7 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 30 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 98 S.

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1
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US$0.87
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US$78.30
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