CSD18542KCS

CSD18542KCS Overview

Product belongs to the CSD18542KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 200 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 21 ns of 16 ns. This product has a 5 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 200 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 1.5 V Vgs-th gate-source threshold voltage for efficient power management. The 5.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 6 ns. Qg-Gate-Charge is 44 nC. This product features a 198 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD18542KCS Image

CSD18542KCS Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD18542KCS
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Tradename NexFET
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 200 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 21 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 200 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.5 V
• Rds-On-Drain-Source-Resistance 5.1 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 18 ns
• Typical-Turn-On-Delay-Time 6 ns
• Qg-Gate-Charge 44 nC
• Forward-Transconductance-Min 198 S
• Channel-Mode Enhancement

CSD18542KCS FAQ

• A: What is the Series of the product?

  Q: The Series of the product is CSD18542KCS.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.211644 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Tradename of the product?

  Q: The Tradename of the product is NexFET.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 200 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 21 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 5 ns

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 200 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.5 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.1 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 18 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 6 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 44 nC

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 198 S

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement